Diode Chip/Bar/Stack

Diode Chip/Bar/Stack

Keywords: diode chip, laser chip, diode bar, diode stack, pumping modul
Jun 16, 2021 View: 6934 Data Sheet

Laser diode chips, bars stacks are the key components in laser pumping, industrial laser processing and advanced machining. We can provide various chips, bars and stacks in the wavelengths 0.75-1.06um, single emitters and chips at single mode and mult

Laser diode chips, bars & stacks are the key components in laser pumping, industrial laser processing and advanced machining. We can provide various chips, bars and stacks in the wavelengths 0.75-1.06um, single emitters and chips at single mode and multi-mode, a few hundred watts, COS/COC/MCC packages. Customized products are available upon request. These products are widely used in laser industrial material processing, medical application, communications, safety protection, intelligent sensing, and scientific research.

STCX Series High-power Diode Laser Chips/Bars/Arrays/Stacks

(1)   High-power Single Emitter Laser Chips – BC Series

 

Optical
Center Wavelength nm 915 915 976 976
Wavelength Tolerance nm ±10 ±10 ±3 ±3
Output Power W 25 30 25 30
Operating Mode # CW CW CW CW
Fast-axis Divergence Deg 55 55 55 55
Slow-axis Divergence Deg 9.5 9.5 9.5 9.5
Spectral Width (FWHM) nm 4 4 4 4
Wavelength Temp Coefficient nm/℃ 0.3 0.3 0.33 0.33
TE Polarization % 97 97 97 97
Electrical
Emitter Width μm 195 230 195 230
Cavity Length mm 4.5 4.5 4.5 4.5
Width μm 400 400 400 400
Thickness μm 145 145 145 145
Geometric
Electro-optic  Conversion Eff. % 62 62 63 63
Slope Efficiency W/A 1.15 1.15 1.1 1.1
Thershold Current A 1.5 1.8 1.1 1.5
Operating Current A 25 30 25 30
Operating Voltage V 1.65 1.65 1.55 1.55

(2)   High-power Diode Bar – BB Series

Optical
Center Wavelength nm 808 808 808 808 940 940
Wavelength Tolerance nm ±10 ±10 ±10 ±3 ±3 ±3
Output Power W 50 60 100 ≥500 200 ≥700
Fast-axis Divergence Deg ≤65 ≤65 ≤65 ≤65 ≤55 ≤55
Slow-axis Divergence Deg ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5
Spectral Width (FWHM) nm ≤2.5 ≤2.5 ≤3 ≤3.5 ≤3 5
TE Polarization TM/TE TE TE TE TE TE TE
Wavelength Temp Coefficient nm/℃ 0.28 0.28 0.28 0.28 0.3 0.3
Electrical
Electro-optic Conversion Eff % ≥55 ≥55 ≥55 ≥58 ≥63 ≥63
Slope Efficiency W/A 1.25 1.25 1.25 1.25 1 1.15
Threshold Current A 8 12 15 25 25 25
Operating Current A 50 60 105 ≤430 220 650
Operating Voltage V 1.8 1.8 1.8 2.0 1.55 1.7
Pulse Width us - - - 200 - 500
Pulse frequency Hz - - - 400 - 160
Pulse duty cycle % - - - 8 - 8
Geometric
Number of Emitters # 19 49 49 34 24 34
Emitter Width μm 150 100 100 232 200 232
Emitter Pitch μm 500 200 200 290 400 290
Fill Factor % 30 50 50 80 50 80
Cavity Length mm 1.0 1.0 1.5 1.5 3 2
Bar Thickness μm 145 145 145 115 115 115
Bar Length mm 10 10 10 10.25 10.25 10.25
Thermal
Operating Temperature 25 25 25 25 20 25
Storage Temperature 40~80 -40~80 40~80 40~80 -40~80 40~80
Flow Velocity L/min / 0.25 0.25 0.20 0.25 0.25

(3)   High-power Diode VCSEL Chips – TOF series

 

Optical
Center Wavelength@Iop nm 808 850 940 940
Spectral width (half width) nm 2 2 2 2
Wavelength shift / temperature nm/℃ 0.07 0.07 0.07 0.07
Emitter aperture μm 10 10 10 10
Emitter minimum pitch μm 44 47 33 40
Emitter number / 621 1216 305 364
Output Power W 3.1 4 2.1 3.1
Operating current A 3.5 5 2.8 3.5
Power consumption W 7 10 5.6 7
Operating Voltage V 2 2 2 2
Operating efficiency % 35 40 40 40
Threshold current A 0.7 1.2 0.38 0.47
Divergence angle ° 22 22 20 20
Geometric
Emitter length μm 916 1535 525 916
Emitter width μm 901 1560 615 610
Chip length μm 1206 1845 695 996
Chip width μm 1006 1670 795 890
Chip thickness μm 100 100 100 100

(4)   High-power Diode VCSEL Chips – SL Series

 

Optical
Center Wavelength@Iop nm 934 940 946
Spectral width (half width) nm 2
Wavelength shift / temperature nm/℃ 0.07
Emitter aperture μm 8
Emitter minimum pitch μm 21
Emitter number(Area A) - 377
Emitter number(Area B) - 6
Output Power(Area A) W 1.3 1.5 1.7
Output Power(Area B) W 0.024
Single point power W 0.004
Operating current(Area A) A 3.6
Operating current(Area B) A 0.06
Power consumption(Area A) W 3.6
Power consumption(Area B) W 0.06
Operating Voltage V 2
Operating efficiency % 40 45
Threshold current(Area A) A 0.38
Threshold current(Area B) A 0.006
Divergence angle ° 20
Geometric
Luminous zone length μm 523
Light-emitting area width μm 548
Chip length μm 758 778 798
Chip width μm 701 721 741
Chip thickness μm 90 100 110

(5)   High-power Diode VCSEL Chips – LI Series

Optical
Center Wavelength nm 905 940
Spectral width (half width) nm 2 2
Wavelength shift / temperature nm/℃ 0.07 0.07
Emitter aperture μm 12 12
Emitter minimum pitch μm 22 22
Emitter number / 136 136
Output Power W 60 60
Operating current A 15 15
Power consumption W 300 300
Operating Voltage V 25 25
Operating efficiency % 20 20
Threshold current A 0.2 0.2
Divergence angle ° 20 20
Geometric
Emitter length μm 273 273
Emitter width μm 288 288
Chip length μm 520 520
Chip width μm 401 401
Chip thickness μm 100 100

(6)   High-power Diode Laser Device – COS Series

Optical
Center Wavelength nm 915 915 976 976
Wavelength Tolerance nm ±10 ±10 ±3 ±3
Output Power W 25 30 25 30
Operating Mode # CW CW CW CW
Fast-axis Divergence Deg 55 55 55 55
Slow-axis Divergence Deg 9.5 9.5 9.5 9.5
Spectral Width (FWHM) nm 4 4 4 4
Wavelength Temperature Coefficient nm/℃ 0.3 0.3 0.33 0.33
TE Polarization % 97 97 97 97
Electrical
Electrio-optic Conversion Eff % 62 62 63 63
Slope Efficiency W/A 1.15 1.15 1.1 1.1
Thershold Current A 1.5 1.8 1.1 1.5
Operating Current A 25 30 25 30
Operating Voltage V 1.65 1.65 1.55 1.55
Geometric
Emitter Width μm 195 230 195 230
Cavity Length mm 4.5 4.5 4.5 4.5
Width μm 400 400 400 400
Thickness μm 145 145 145 145

(7)   High-power Diode Laser Devices – MCC Series

Optical
Center Wavelength nm 808 808 808 808 940 940
Wavelength Tolerance nm ±10 ±10 ±10 ±10 ±3 ±3
Output Power W 50 60 100 ≥500 200 200
Fast-axis Divergence Deg ≤65 ≤65 ≤65 ≤65 ≤55 ≤55
Slow-axis Divergence Deg ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5 ≤8.5
Spectral Width (FWHM) nm ≤2.5 ≤2.5 ≤3 ≤3.5 ≤3 ≤3
Polarization Mode TM/TE TE TE
Wavelength Temperature Coefficient nm/℃ 0.28 0.28 0.28 0.28 0.3 0.3
Electrical
Electrio-optic Conversion Eff % ≥55 ≥55 ≥55 ≥58 ≥63 ≥63
Slope Efficiency W/A 1.25 1.25 1.25 1.25 1 1.15
Thershold Current A 8 12 15 25 25 25
Operating Current A 50 60 105 ≤430 220 650
Operating Voltage V 1.8 1.8 1.8 2.0 1.55 1.7
Pulse Width us - - - 200 - 500
Pulse frequency Hz - - - 400 - 160
Pulse Duty Cycle % - - - 8 - 8
Geometric
Number of Emitters # 19 49 49 34 24 34
Emitter Width μm 150 100 100 232 200 232
Emitter Pitch μm 500 200 200 290 400 290
Fill Factor % 30 50 50 80 50 80
Cavity Length mm 1.0 1.0 1.5 1.5 3 2
Bar Thickness μm 145 145 145 115 115 115
Bar Length mm 10 10 10 10.25 10.25 10.25
Thermal
Operating Temp. 25 25 25 25 20 25
Storage temp. -40~80 -40~80 -40~80 -40~80 -40~80 -40~80
Water Flow Rate L/min / 0.25 0.25 0.20 0.25 0.25

(8)   High-power Diode Laser Stacks – MCP Series

Optical
Center Wavelength nm 808 808 808
Wavelength Tolerance nm ±10 ±10 ±3
Output Power W 60 100 300
Number of Bars # 2 ~ 60 2 ~ 60 2 ~ 60
Spectral Width (FWHM) nm ≤8 ≤8 4
Operating Mode # CW CW QCW
Fast-axis Divergence Deg ≤42 ≤42 40
Slow-axis Divergence Deg ≤10 ≤10 10
Wavelength Temp Coefficient nm/℃ 0.28 0.28 0.28
Electrical
Power Conversion Efficiency % 50 50 50
Slope Efficiency/Bar W/A ≥1.1 ≥1.1 1.1
Threshold Current A 4.5 4.5 4.5
Operating Current A 0.16 0.16 290
Operating Voltage/Bar V ≤2 ≤2 1.8
Thermal
Operating Temperature 15 ~ 35 15 ~ 35 25
Storage Temperature 0~55 0~55 0~55
Bar/Water Velocity/Bar l/m 0.3~0.5 0.3~0.5 0.3
Entrace Maximum Pressure psi 55 55 55
Water Type - DI Water DI Water DI Water
Deionized Water Resistivity(DI) kΩ·cm 200~500 200~500 200~500
Pure Water Filter Particles μm <20 <20 <20

(9)   High-power Diode Laser Stacks – QCP Series

Optical
Center Wavelength nm 808 808
Wavelength Tolerance W ±3 ±10
Bar Output Power/Bar % 300 40
Number of Bars % 2 ~ 24 60
Total Output Power μm - 2400
Bar-to-Bar Spacing - 0.4 ~ 1.8 0.9
Spectral Width (FWHM) - 4 8
Pulse Width m 50-500 10-100
Repetition Rate 1-200 1-10
Fast-axis Divergence(FWHM) nm 40 40
Slow-axis Divergence(FWHM) mW 10 10
Wavelength Temp Coefficient 0.28 0.28
Electrical
Electro-optic Conversion Eff % 50 50
Slope Efficiency/Bar W/A 1.1 1.1
Threshold Current A 20 10
Operating Current A 300 50
Operating Voltage/Bar V 2 1.8
Thermal
Water Type - Pure Water Pure Water
Operating Temperature 25 25
Storage Temperature -40-85 -40-85

(10)  High-power Diode Laser Devices – TO Series

Optical
Min Typical Max
Center Wavelength nm 820 830 840
Wavelength Tolerance nm ±10
Output Power W 1.0
Spectral Width(FWHM) nm 3.0 4.0
Wavelength Temp Coefficient nm/℃ 0.3
Electrical
Electro-optic Conversion Eff % 36 42
Slope Efficiency W/A 1.05 1.1
Threshold Current A 0.38 0.45
Operating Current A 1.28 1.40
Operating Voltage V 1.8 2.2
Thermal
Operating Temperature 0 25 40
Storage Temperature -20~70

SBN Series Diode Laser Chips/Bars/Stacks

We, a diode laser company, manufacture high-power diode lasers and systems in a wide range of output powers and wavelengths Including wafer growth and slicing, fiber coupling and bar stacking laser. More than 1000 models are for your choice. Established in 2011,  over 60 technicians and 2 scientists, 20 of them are PHD degree. Production site is 1000Class Lab Clean Room with 5000sqm. Our current turnover per year is about 20million US Dollars with 30% growth year on year. Our strengths are in talent employees, quality engineering, process control, product development and volume manufacturing.

1.  Bare Laser Chip/Bar

Optical

Central Wavelength 755nm,808nm,830nm,905nm,940nm,976nm,1550nm
Wavelength Tolerance ±10nm, ±5nm, ±3nm
Output Power 2W,10W,20W,50W,100W,150W,200W,300W,500W,1000W
Working Mode CW/QCW/Single Mode
Number of Emitter 1~60
Filling Factor 30%~75%
Cavity Length 1000um/1500um/2000um/3000um/4000um

Electrical

Working Current 1~300A
Threshold Current 0.5~50A
Working Voltage 1.8~2.1V
Power Conversion Eff 30%~60%

Thermal

Working Temp 25℃
Storage Temp -30-80℃
Wavelength Temp Coefficient ~0.3nm/℃

2.  Stack Array Laser Diodes

Optical

Central Wavelength 755nmm, 808nm, 915nm, 940nm, 976nm, 1064nm
Wavelength Tolerance ±10nm, ±5nm, ±3nm
Output Power Per Bar 20W/40W/80W/100W/200W/300W~30000W
Number of Bars 1~60pcs
Working Mode CW/QCW

Electrical

Working Current 1~300A
Threshold Current 0.5~50A
Working Voltage 1~40V
Power Conversion Eff 30%~60%

Optional functions: FAC lens, SAC lens.

Thermal

Working Temp -20~70℃
Storage Temp -30-80℃
Wavelength Temp Coefficient ~0.3nm/℃
Cooling Way Water Cooled/TEC/Conduction Cooled/Air Cooled

STHT Series Diode Chips/Emitters/Bars/Arrays

1. Unmounted Single Diode Emitters and Bars

Semiconductor lasers are one of most of today’s industrial lasers. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

We have been focusing on the semiconductor wafer technology from 1998, delivers the multimode high power at wavelengths between 808 and 1064nm.

  • High Power multimode unmounted bars up to 40W CW and 200W QCW output

  • Unmounted single emitters up to 2W CW Power

  • Available wavelengths include 808nm and 980nm

Part No. Wavelength Output Power Emitter Width Cavity Length Width
STHT-CLDM-0808-0500-02 808±5nm 500mW 50µm 600µm 500µm
STHT-CLDM-0808-1000-02 808±5nm 1W 100µm 900µm 500µm
STHT-CLDM-0808-2000-02 808±5nm 2W 100/150µm 1500/1000µm 500µm
STHT-CLDM-0980-0500-02 980±10nm 500mW 50µm 600µm 500µm
STHT-CLDM-0980-1000-02 980±10nm 1W 100µm 900µm 500µm
STHT-CLDM-0980-2000-02 980±10nm 2W 150µm 1000µm 500µm
Unmounted Bars Wavelength Output Power Operation Mode Fill Factor Number of single emitters
STHT-LDAC1-0808-0020 808±5nm 20W CW 20% 19
STHT-LDAC1-0808-0040 808±5nm 40W CW 30% 19
STHT-LDAQ1-0808-0100 808±5nm 100W QCW 87% 100
STHT-LDAQ1-0808-0200 808±5nm 200W QCW 71% 58

2. Packaged Diode Single Emitters

LDM series packaged single emitters are Fabry-Perot cavity semiconductor lasers based on Quantum-well epitaxy and ridge waveguide structure design. Sintec packaged single emitters provide excellent reliability and performance.

  • Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm

  • Package designs include TO mounts, COS mounts, C-mounts and F-mounts

  • Provide beam shaping services like fast-axis compression according to customer demands

Part No. Wavelength

nm

Output Power(20°C) Operating Current Operating Voltage Package
STHT-LDM-0635-500m 635 500mW ≤1.35A ≤2.3V C-Mount / TO3
STHT-LDM-0650-300m 650 300mW ≤1.0A ≤2.3V C-Mount / TO3
STHT-LDM-0670-300m 670 300mW ≤1.0A ≤2.3V C-Mount / TO3
STHT-LDM-0808-200m 808 200mW ≤220mA ≤2.0V TO56
STHT-LDM-0808-300m 808 300mW ≤330mA ≤2.0V TO56
STHT-LDM-0808-500m 808 500mW ≤560mA ≤2.0V TO9
STHT-LDM-0808-001W 808 1W ≤1.24A ≤2.0V TO9
STHT-LDM-0808-002W 808 2W ≤2.1A ≤2.0V CoS/ F-Mount /C-Mount
STHT-LDM-0808-003W 808 3W ≤3.3A ≤2.0V CoS/ F-Mount/ C-Mount
STHT-LDM-0808-005W 808 5W ≤5.5A ≤2.0V CoS/ F-Mount/ C-Mount
STHT-LDMP-0808-007W 808 7W (ms pulse) ≤7.8A ≤3.0V TO56
STHT-LDM-0808-008W 808 8W ≤10A ≤2.0V CoS/ F-Mount/ C-Mount
STHT-LDM-0830-001W 830 1W ≤1.3A ≤2.0V CoS/ C-Mount
STHT-LDMP-0830-005W 830 5W (ms pulse) ≤5.30A ≤3.0V TO56
STHT-LDM-0915-010W 915 10W ≤11A ≤2.2V CoS/ F-Mount
STHT-LDM-0940-003W 940 3W ≤3.2A ≤2.0V CoS/ F-Mount/ C-Mount
STHT-LDM-0980-500m 980 500mW ≤700mA ≤2.0V TO9
STHT-LDM-0980-001W 980 1W ≤1.3A ≤2.0V TO9
STHT-LDM-0980-002W 980 2W ≤2.3A ≤2.0V CoS/ C-Mount
STHT-LDM-0980-003W 980 3W ≤3.6A ≤2.0V CoS/ C-Mount
STHLDMP-980-005W 980 5W (ms pulse) ≤5.8A ≤3.0V TO56

3. Diode Laser Packaged Bars and Arrays

LDA series high power packaged bars provide OEM customers with scalable power up to kilowatts for pumping, industrial, medical and applications. The packaged laser bars can be configured for enhanced brightness through stacking, scaled linearly or vertically for optimized light and material integration. LDA series offer:

  • Wavelengths at 808nm to 1100nm range

  • Modular and Compact design for ease of integration

  • Up to 100W CW and 300W QCW laser diode bars for high brightness

  • Packaged 10mm laser diode bar, various standard bar configurations (custom bar configurations available on request)

Packaged Bars Center Wavelength Output Power Operation Mode Cooling
STHT-LDAC1-0808-020W 808nm 20W CW Conduction-cooled
STHT-LDAC1-0808-040W 808nm 40W CW Conduction-cooled
STHT-LDAC1-0808-060W 808nm 60W CW Conduction-cooled
STHT-LDAC1-09xx-060W 9xxnm 60W CW Conduction-cooled
STHT-LDAC1-1064-040W 1064nm 40W CW Conduction-cooled
STHT-LDAC1-0808-040W 808nm 40W CW Microchannel-cooled
STHT-LDAC1-0808-060W 808nm 60W CW Microchannel-cooled
STHT-LDAC1-0808-100W 808nm 100W CW Microchannel-cooled
STHT-LDAC1-09xx-060W 9xxnm 60W CW Microchannel-cooled
STHT-LDAC1-1064-040W 1064nm 40W CW Microchannel-cooled
STHT-LDAQ1-0808-100W 808nm 100W QCW Conduction-cooled
STHT-LDAQ1-0808-200W 808nm 200W QCW Conduction-cooled
STHT-LDAQ1-0808-300W 808nm 300W QCW Conduction-cooled
Vertical Arrays Center Wavelength Power per bar Operation Mode Cooling
STHT-LDAC2-0808-xxx 808nm 40-100W CW Microchannel-cooled
STHT-LDAC2-09xx-xxx 9xxnm 40-100W CW Microchannel-cooled
STHT-LDAC2-1064-040W 1064nm 40W CW Microchannel-cooled
STHT-LDAQ2-0808-xxx 808nm 100-300W QCW Conduction-cooled
STHT-LDAQ2-0940-xxx 940nm 100-200W QCW Conduction-cooled
Horizontal Arrays Center Wavelength Power per bar Operation Mode Cooling
STHT-LDAC3-0808-xxx 808nm 40-100W CW Microchannel-cooled
STHT-LDAC3-09xx-xxx 9xxnm 40-100W CW Microchannel-cooled
STHT-LDAC3-1064-040W 1064nm 40W CW Microchannel-cooled
STHT-LDAC3-0808-xxx 808nm 40-100W CW Macrochannel-cooled
STHT-LDAC3-09xx-xxx 9xxnm 40-100W CW Macrochannel-cooled
STHT-LDAC3-1064-040W 1064nm 40W CW Macrochannel-cooled
STHT-LDAQ3-0808-xxx 808nm 100-300W QCW Macrochannel-cooled
STHT-LDAQ3-0940-xxx 940nm 100-200W QCW Macrochannel-cooled
  • 9xxnm center wavelength includes 915nm/940nm/980nm.

  • Please contact us to discuss your specific requirements.

4. Diode Laser Arrays for Hair Removal

The vertical arrays specially designed for hair removal application, can stack up to 10 packaged laser bars to form a high power diode laser assembly. Each of these laser bars individually provides up to 100watts in CW mode. The small gaps between the laser bars make the module obtain maximum brilliance from the arrays, enabling the module to work with high efficiency

  • Power up to 1000W

  • Compact designs

  • Reliable package with hard solder

Part No. STHT-LDAQ2-0808-300 STHT-LDAQ2-0808-500 STHT-LDAQ2-0808-800 STHT-LDAQ2-0808-1000
Operation Mode QCW QCW QCW QCW
Center Wavelength nm 808 ± 10 808 ± 10 808 ± 10 808 ± 10
Output Power W 300 500 800 1000
Bar Numbers 5/ 6 10 8 10
Operating Current A ≤50 ≤50 ≤100 ≤100
Operating Voltage V/bar ≤2 ≤2 ≤2 ≤2
Pulse Width ms ≤400 ≤400 ≤200 ≤200
Duty Cycle % ≤40 ≤40 ≤20 ≤20
Bar pitch mm 2 2 2.8 2.8
Emitting Area mm 10×11 10×19.5 10x20 10x25.5
Operating Temp. ℃ 15~35 15~35 15~35 15~35
Storage Temp. ℃ -10~50 -10~50 -10~50 -10~50
Flow Rate L/min >4 >4 >4 >4

STR Series Diode Chips/bars

1. Single Emitter

Single-emitter laser diode (SE) chips are the basic built block for high-power and high-brightness semiconductor laser modules. We manufacture single chips with a variety of output powers and wavelengths.

diode chip, single emitter

Part number Wavelength, nm Output power Current/voltage Emitting width, um Divergence, deg Size, um
STR-638A-110-1-1.5-SE 638 1W 1.4A/2.1V 110 8/35 1500x400x150
STR-755A-350-8-2.5-SE 755 8W 8A/1.9V 350 9/38 2500x500x150
STR-808A-150-3-1-SE 808 3W 3A/1.9V 150 8/24 1000x500x150
STR-808A-190-10-4-SE 808 10W 10A/1.8V 190 10/38 4000x500x150
STR-808A-350-10-2.5-SE 808 10.5W 10A/1.8V 350 8/36 2500x500x150
STR-880A-190-10-4-SE 880 10W 12A/1.8V 190 8/32 2500x500x150
STR-880A-350-10-2.5-SE 880 9.8W 10A/1.8V 350 8/34 2500x500x150
STR-905A-74-25-0.75-SE 905 25W 7A/7.2V 74 13/30 750x400x150
STR-905A-150-50-0.75-SE 905 50W 14A/7.6V 150 12/31 750X400X150
STR-905A-200-75-0.75-SE 905 75W 20A/8.4V 200 12/30 750X400X150
STR-905B-200-25-0.75-SE 905 25W 20A/3.8V 200 14 750X600X150
STR-905-38-15-0.75-SE 905 15W 5A/9.2V 38 35/30 750X400X150
STR-905C-70-25-0.75-SE 905 25W 8A/8.2V 70 17/30 750X400X150
STR-905C-300-75-0.75-SE 905 75W 22A/9.5V 300 12/30 750x400x150
STR-905D-300-100-0.75-SE 905 100W 22A/11V 300 13/30 750x400x150
STR-915A-96-12-4.8-SE 915 12W 12A/1.6V 96 10/26 4800x500x150
STR-915A-190-20-4-SE 915 20W 20A/1.7V 190 10/26 4000x500x150
STR-940A-96-12-4.8-SE 940 12W 12A/1.6V 96 10/26 4800x500x150
STR-940A-190-20-4-SE 940 20W 20A/1.7V 190 10/26 4000x500x150
STR-976A-96-10-4.8-SE 976 10W 10A/1.8V 96 9/27 4800x500x150
STR-976A-96-12-4.8-SE 976 12W 12A/1.6V 96 10/26 4800x500x150
STR-976A-96-13-4-SE 976 13W 12.5A/1.5V 96 8/28 4000x500x150
STR-976A-190-15-4-SE 976 15.5W 15A/1.6V 190 10/29 4000x500x150
STR-976A-190-20-4-SE 976 20W 20A/1.7V 190 10/26 4000x500x150
STR-1064A-190-10-4-SE 1064 10W 14A/0.9V 190 10/30 4000x500x150
STR-1064A-350-10-2.5-SE 1064 10W 13A/1.6V 350 10/29 2500x500x150
STR-1470A-96-1.5-1-SE 1470 1.5W 4A/1.4V 96 11/31 1000x500x150
STR-1470A-96-3-2-SE 1470 3W 9A/1.5V 96 11/28 2000x500x150
STR-1550A-96-1.5-1-SE 1550 1.5W 4A/1.4V 96 11/31 1000x500x150
STR-15500A-96-3-2-SE 1550 3W 9A/1.5V 96 11/28 2000x500x150

2. Bare Bars

Bare bar is an array of individual semiconductor laser chips, with combined output power from dozens of Watts to a few hundred Watts. Our proprietary facet passivation process ensures the reliability required by the most stringent applications.

diode bar

In the following table, WL means wavelength, I/V means operation current/voltage, N means the numbers of emitters, P/width means period (um)/emitter width (um), L/W/T means length/width/thickness of the bar.

Part number WL nm Mode Power I/V N P/Width um Filling L/W/T um
STR-755A-48-80-23-1.5-BAR 755 QCW 80W 86A/1.9V 23 499/190 48% 1500x10000x150
STR-808A-30-50-19-1-BAR 808 CW 50W 45A/1.7V 19 500/150 30% 1000x98000x150
STR-808A-48-100-23-1.5-BAR 808 CW 100W 88A/1.75V 23 400/190 48% 1500x9800x150
STR-808A-72-300-34-1.5-BAR 808 QCW 300W 190A/1.85V 34 290/210 72% 1500x10000x150
STR-940A-30-100-19-2-BAR 940 CW 100W 95A/1.65V 19 500/150 30% 2000x10000x150
STR-940A-50-200-24-3-BAR 940 CW 200W 195A/1.63V 24 400/200 50% 3000x10200x150
STR-940A-76-600-40-2-BAR 940 QCW 600W 600A/1.8V 40 250/190 76% 2000x10400x150
STR-976A-10-35-5-4-BAR 976 CW 35W 35A/1.7V 5 1000/100 10% 4000x5000x150
STR-1470A-18-8-6-2-BAR 1470 CW 8W 24A/1.4V 6 400/96 18% 2000x3000x150

STL Series Diode Laser Chips & Bars

diode laser chip

  • High electrical-optical conversion efficiency

  • >20000 hours lifetime

  • Customized products available

  • Short lead time

  • Quick response

Part number Wavelength Structure Operation Power Operation current/voltage
STL-UMC-190-915-TE-18-4.0 915nm Single chip CW 18W 19.5A/1.8V
STL-UMC-95-915-TE-10-4.0 915nm Single chip CW 10W 11A/1.7V
STL-UMC-28-915-TE-0.5-0.5 915nm Single chip CW 500mW 0.55A/2V
STL-UMC-200-905-TE-75-1.0 905nm Single chip QCW 75W 30A/6.3V
STL-UMC-135-905-TE-50-1.0 905nm Single chip QCW 50W 23A/6.3V
STL-UMC-70-905-TE-25-1.0 905nm Single chip QCW 25W 10A/6.3V
STL-UMC-28-896-TE-0.5-1.0 896nm Single chip CW 0.5W 0.55A/1.8V
STL-UMC-200-880-TE-10-4.0 880nm Single chip CW 10W 10A/1.65V
STL-UMC-100-880-TE-6-4.0 880nm Single chip CW 6W 6.5A/1.65V
STL-UMC-47-830-TE-2.0-2.0 830nm Single chip CW 2W 2A/1.8V
STL-UMC-200-808-TE-10-4.0 808nm Single chip CW 10W 10A/1.75V
STL-UMC-390-808-TE-10-2.0 808nm Single chip CW 10W 10A/1.75V
STL-UMC-200-808-TE-8-4.0 808nm Single chip CW 8W 8.5A/1.75V
STL-UMC-200-808-TE-5-2.0 808nm Single chip CW 5W 4.8A/1.75V
STL-UMC-100-808-TE-3-2.0 808nm Single chip CW 3W 2.8A/1.75V
STL-UMC-100-785-TE-2-2.0 785nm Single chip CW 2W 2.2A/1.75V
STL-UMC-190-976-TE-20-4.0 976nm Single chip CW 20W 23A/1.8V
STL-UMC-95-976-TE-12-4.0-D2 976nm single chip CW 12W 13A/1.65V
STL-UMC-95-976-TE-12-4.0 980nm Single chip CW 12W 13A/1.75V
STL-UMC-190-940-TE-20-4.0 940nm Single chip CW 20W 23A/1.8V
STL-UMC-95-940-TE-12-4.0 940nm Single chip CW 12W 13A/1.75V
STL-UMC-390-808-TE-10-2.0 808nm Single chip CW 10W 10A/1.75V
STL-UMC-100-785-TE-2-2.0 785nm Single chip CW 2W 2.2A/1.75V
STL-UMB-10-5-976-TE-40-4.0 976nm bar CW 40W 41A/1.6
STL-UMB-80-37-940-TE-1000-4.0 940nm bar QCW 1000W 550A/3.6V
STL-UMB-35-24-940-TE-200-3.0 940nm bar QCW 200W 212A/1.65V
STL-UMB-75-60-808-TE-500-1.5 808nm bar QCW 500W 460A/2.1V
STL-UMB-75-30-808-TE-150-1.5 808nm bar QCW 150W 145A/1.9V
STL-UMB-50-47-808-TE-100-1.5 808nm bar CW 100W 105A/1.8V
STL-UMB-50-47-808-TE-60-1.0 808nm bar CW 60W 63A/1.8V
STL-UMB-50-47-808-TE-100-1.5-2 808nm bar CW 100W 100A/1.8V
STL-UMB-75-30-808-TE-150-1.5 808nm bar QCW 150W 145A/1.9V
STL-UMB-75-60-808-TE-300-1.5 808nm bar QCW 300W 280A/1.9V
STL-UMB-75-60-808-TE-300-1.5-D1 808nm bar QCW 300W 280A/1.9V
STL-UMB-75-60-808-TE-200-1.0 808nm bar QCW 200W 190A/1.9V
STL-UMB-30-19-808-TE-50-1.0 808nm bar CW 50W 48.5A/1,8v

STD Series Laser Chips, Bars & Stacks

1. STD Series Diode Laser Chips & Bars

Features:

  • High output power

  • High electrical-optical conversion efficiency

  • High brightness

  • High reliability

Technical Advantages:

  • High efficient epitaxial structure design

  • High-quality epitaxial material growth

  • Special passivation method for cavity surface

laser diode chip

Part number Wavelength Power Operation current/voltage Remark
STD-UMC-100-808-TE-6-4.0 808nm 6W 5.7A/1.75V CW single chip
STD-UMC-190-808-TE-10-4.0 808nm 10W 9.5A/1,75 CW single chip
STD-UMC-190-808-TE-12-4.0 808nm 12W 10.5A/1.75V CW single chip
STD-UMC-100-915-TE-12-4.5 915nm 12W 10.5A/1.62V CW single chip
STD-UMC-160-915-TE-18-5.0 915nm 18W 17.5A/1.65V CW single chip
STD-UMC-190-915-TE-22-5.0 915nm 22W 20.0A/1.68V CW single chip
STD-UMC-230-915-TE-25-5.0 915nm 25W 24.5A/1.70V CW single chip
STD-UMC-100-945-TE-12-4.5 945nm 12W 11.5A/1.70V CW single chip
STD-UMC-160-945-TE-18-5.0 945nm 18W 17.5A/1.70V CW single chip
STD-UMC-190-945-TE-22-5.0 945nm 22W 21.5A/1.70V CW single chip
STD-UMC-230-945-TE-25-5.0 945nm 25W 25.0A/1.70V CW single chip
STD-UMC-100-975-TE-12-4.5 975nm 12W 12.5A/1.52V CW single chip
STD-UMC-100-975-TE-15-4.5 975nm 15W 16.0A/1.55V CW single chip
STD-UMC-190-975-TE-22-5.0 975nm 22W 23.5A/1.55V CW single chip
STD-UMC-230-975-TE-25-5.0 975nm 25W 27.0A/1.55V CW single chip
STD-UMC-230-975-TE-30-5.5 975nm 30W 33.0A/1.55V CW single chip
STD-UMB-30-19-808-TE-50-1.5 808nm 50W 42.0A/1.80V CW bar
STD-UMB-50-47-808-TE-100-1.5 808nm 100W 92.0A/1.80V CW bar
STD-UMB-50-47-940-TE-120-2.0 940nm 120W 115A/1.65V CW bar
STD-UMB-50-47-976-TE-200-4.0 976nm 200W 195A/1.55V CW bar
STD-UMB-75-37-808-TE-300-1.5 808nm 300W 250A/2.00V QCW bar

2. Pump Modules & Stacks

  • AuSn hard solder packaging construction

  • High duty cycle, high energy density

  • Filtered water, alternative cooling fluids

  • Small pitch, compact size

  • Optional seal band optical waveguide assemble

  • Optional fast collimation

  • Used for laser pumping, hair removal etc.

2.1 Pump Modules

laser diode chips laser diode chip stack

Part number Structure Laser power Laser wavelength
STD-HS12 Macro channel stack 600W-16500W 760nm-1100nm
STD-GS20 Conduction cooling stack 4000W-1000W 760nm-1100nm
STD-L5 Macro channel horizontal stack 300W-3000W 760nm-1100nm
STD-E27 Macro channel stack 4000W-10000W 760nm-1100nm
STD-MA Micro channel stack 2500W-15000W 760nm-1100nm
STD-HM7 Whole micro channel stack 700W-3500W 760nm-1100nm

(1) Macro channel stack STD-HS12diode chip, bar, stack

  • AuSn hard solder packaging construction

  • High duty cycle, high energy density

  • Filtered water, alternative cooling fluids

  • Small pitch, compact size

  • Optional seal band optical waveguide assemble

  • Optional fast collimation

  • Used for laser pumping, hair removal etc.

Wavelength 760-1100nm
Peak power, W 600 1200 7200 10000 16500
Operation mode QCW
Operation current, A 50 95 550 450 450
Duty cycle up to, % 25 15 5 1 0.4
Number of bars 12 12 12 20 Up to 33
Bar to bar pitch, mm 1.2 1.2 1.2 0.93 0.4
Electric/optic conversion efficiency, % 58 Up to 60 56 56 56
Fast axis divergence FWHM, deg 35, optional FAC<4 35
Slow axis divergence FWHM. deg 10
Dimension, mm 28.6x24x11.5mm

Typical pulse energy:

Pulse width Frequency (Hz) Iop
1 2 3 4 5 6 7 8 9 10
10 ms 13 13 12.7 12.75 13 12.7 13 13 12.9 12.9 95A
20 ms 21 21 21.7 21.5 21.4 21.7 21 21.4 20 20.9 85A
30 ms 31 31.5 32 32 - - - - - - 60A
40 ms 43 41 42 - - - - - - - 60A
50 ms 53 51 - - - - - - - - -
60 ms 61 59.5 - - - - - - - - -
70 ms 70 - - - - - - - - - -
80 ms 50 - - - - - - - - - -
90 ms 54 - - - - - - - - - -
100ms 60 - - - - - - - - - -

Remark: cooling water: T 25deg, flow rate 4.5-5.0L/min

(2) Conduction cooling stack STD-GS20diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Optional fast-axis collimation

  • Small pitch, compact size

  • Optional seal protection

  • Multi-wavelength in a single array

  • Used for laser pumping, hair removal etc.

Wavelength 760-1100nm
Peak power, W 4000 6000 10000
Operation mode QCW QCW QCW
Operation current, A 200 280 450
Duty cycle up to, % 1.2 1 0.4
Pulse width, us Up to 1000 600 200
Number of bars 20
Bar to bar pitch, mm 0.73
Electric/optic conversion efficiency, % 52 56 58
Fast axis divergence FWHM, deg 35, optional FAC < 4
Slow axis divergence FWHM. deg 10
Dimension, mm 37.5x10x9

(3) Macro channel horizontal stack STD-L5diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Contact size

  • Used for pumping

Wavelength 760-1100nm
Peak power, W 300 1500 3000
Operation mode CW QCW QCW
Operation current, A 55 280 550
Number of bars 5
Bar to bar pitch, mm 0.73
Electric/optic conversion efficiency, % 56 56 58
Fast axis divergence FWHM, deg 35
Slow axis divergence FWHM. deg 10
Dimension, mm 70x14x10

(4) Macro channel stack STD-E27diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Optional fast axis collimation

  • Small pitch, compact size

  • Optional seal protection

  • Multi-wavelength in a single array

  • Used for laser pumping

Wavelength 760-1100nm
Peak power, W 4000 6000 10000
Operation mode QCW QCW QCW
Operation current, A 200 280 450
Duty cycle up to, % 8 5 0.4
Pulse width, us Up to 1000 600 200
Number of bars 20
Bar to bar pitch, mm 2.21
Electric/optic conversion efficiency, % 52 56 58
Fast axis divergence FWHM, deg 35, optional FAC < 4
Slow axis divergence FWHM. deg 10
Dimension, mm 37.5x12x13.4

(5) Whole micro channel stack STD-HM7laser diode chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Narrow spectrum

  • Filtered water, alternative cooling fluids

  • Used for laser pumping & hair removal

Wavelength 760-1100nm
Peak power, W 700 2100 3500
Operation mode QCW QCW QCW
Operation current, A 100 280 450
Duty cycle up to, % 40 8 4
Pulse width, us Up to 1000 600 200
Number of bars 7
Bar to bar pitch, mm 2.0
Electric/optic conversion efficiency, % 60 56 58
Fast axis divergence FWHM, deg 35
Slow axis divergence FWHM. deg 10
Dimension, mm 30x13x4.95

2.2 Stacks for Hair Removal

laser diode chip & stack

Part number Structure Laser power Laser wavelength
STD-HH05 Macro channel stack 300W/500W 760nm-1100nm
STD-HL07 Macro channel stack 300W-700W 760nm-1100nm
STD-HS12 Macro channel stack 600W-1200W 760nm-1100nm

(1) Macro channel stack STD-HH05diode laser chip bar stack

  • AuSn hard solder packaging construction

  • Suitable for long pulse width operation

  • Filtered water, alternative cooling fluids

  • Seal protection

  • High duty cycle

  • Used for hair removal & laser pumping

Typical Specifications

Wavelength 760-1100nm
Peak power, W 300 500
Operation mode QCW QCW
Operation current, A 95 95
Duty cycle up to, % 20 10
Pulse width, us 200 100
Number of bars 3 5
Bar to bar pitch, mm 5 2.9
Electric/optic conversion efficiency, % 58 58
Fast axis divergence FWHM, deg 35
Slow axis divergence FWHM. deg 10
Dimension, mm 42x25.27x20

Operation Conditions

STD-HH05-808 STD-HH03-300-808
Peak power per bar, W 100 80 60 100
Operation current, A 95 80 65 95
Pulse width, ms Max. frequency, Hz
10 30 40 40 40
20 10 15 20 20
30 10 12 13 13
40 10 10 10 10
50 5 6 8 8
60 4 5 6 6
80 3 4 5 4
100 2 3 4 2
200 - 1 2 1
400 - - 1 -

(2) Macro channel stack STD-HL07laser diode chip bar stack

  • AuSn hard solder packaging construction

  • Suitable for long pulse width operation

  • Filtered water, alternative cooling fluids

  • Seal protection

  • High duty cycle

  • Used for hair removal & laser pumping

Typical Specifications

Wavelength 760-1100nm
Peak power, W 300 500 600 700
Operation mode QCW QCW QCW QCW
Operation current, A 50 50 95 95
Duty cycle up to, % 40 40 10 10
Pulse width, us Up to 400 Up to 400 100 100
Number of bars 60 10 6 7
Bar to bar pitch, mm 2.2 2.2 3.4 2.9
Electric/optic conversion efficiency, % 58 58 58 58
Fast axis divergence FWHM, deg 35
Slow axis divergence FWHM. deg 10
Dimension, mm 39x40x36

Operation Conditions

STD-HL06-600-808
STD-HL07-700-808
STD-HL06-300-808
STD-HL10-500-808
Peak power per bar, W 100 80 60 50
Operation current, A 95 80 65 50
Pulse width, ms Max. frequency, Hz
10 30 40 40 440
20 10 15 20 20
30 10 12 13 13
40 10 10 10 10
50 5 6 8 8
60 4 5 6 6
80 3 4 5 5
100 2 3 4 4
200 - 1 2 2
400 - - 1 1

(3) Macro channel stack STD-HS12diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High duty cycle, high energy density

  • Filtered water, alternative cooling fluids

  • Small pitch, compact size

  • Optional seal band optical waveguide assembly

  • Optional fast-axis collimation

  • Used for hair removal & laser pumping

Wavelength 760-1100nm
Peak power, W 600 1200 7200 10000 16500
Operation mode QCW
Operation current, A 50 95 550 450 450
Duty cycle up to, % 25 15 5 1 0.4
Pulse width, us 25 10 0.6 0.4 0.2
Number of bars 12 12 12 20 Up to 33
Bar to bar pitch, mm 1.2 1.2 1.2 0.73 0.4
Electric/optic conversion efficiency, % 58 Up to 60 56 56 56
Fast axis divergence FWHM, deg 35, optional FAC<4 35
Slow axis divergence FWHM. deg 10
Dimension, mm 28.6x24x11.5mm

STD-HS12-1200-808 typical pulse energy (J/cm2):

Pulse width Frequency (Hz) Iop
1 2 3 4 5 6 7 8 9 10
10 ms 13 13 12.7 12.75 13 12.7 13 13 12.9 12.9 95A
20 ms 21 21 21.7 21.5 21.4 21.7 21 21.4 20 20.9 85A
30 ms 31 31.5 32 32 - - - - - - 60A
40 ms 43 41 42 - - - - - - - 60A
50 ms 53 51 - - - - - - - - -
60 ms 61 59.5 - - - - - - - - -
70 ms 70 - - - - - - - - - -
80 ms 50 - - - - - - - - - -
90 ms 54 - - - - - - - - - -
100ms 60 - - - - - - - - - -

Remark: cooling water: T 25deg, flow rate 4.5-5.0L/min

STO Series High Power Laser Diode Bars/Stacks

diode pump gain module

1. Laser Diode Bars

Model STO-CS20 STO-CS40 STO-CS60 STO-CS100Q STO-CS200Q STO-CS300Q
Output Power 20W 40W 60W 100W 200W 300W
Wavelength 808 / 880 / 915 / 976 / 980 nm 808 / 880 / 915 / 976 / 980 nm 808 / 880 / 915 / 976 / 980 nm 808 / 880 / 915 / 976 / 980 nm 808 / 880 / 915 / 976 / 980 nm 808 / 880 / 915 / 976 / 980 nm
Operation Mode CW CW CW QCW QCW QCW
Duty Circle CW CW CW ≤5% ≤5% ≤5%
Pulse Width CW CW CW ≤300μs ≤300μs ≤300μs
Typical Current 25A 40A 60A 100A 180A 260A

2. Laser Diode Horizontal Stacks

STO-HSCW Series, CW Laser Diode Horizontal Stacks

Model STO-HSCW-20-3 STO-HSCW-20-4 STO-HSCW-40-3 STO-HSCW-40-4
Output Power 60W 80W 120W 160W
Typical Current 25A 25A 38A 38A
Operation Voltage <6V <8V <6V <8V

Note: STO-HSCW-20/40-N can be customized with N≤20. The total output power is 20/40 times N.

STOU-HSQCW Series QCW Laser Diode Horizontal Stacks

Model STO-HSQCW-100~300-N
Output Power QCW 100W~300W*N
Repetition Rate 0-1000Hz
Pulse Width 50-300μs
Duty Circle ≤10% or ≤20%

Note: STO-HSQCW-100~300-N can be customized. Single unit can be mounted with 1, 2 or 3 pcs of laser diode bar. Typical wavelength of the diode bar is 805+/-3nm. However, the wavelength must be specified according to the special pulse width, repetition rate and heat sink designs.

Specifications of Diode Bar STO-HSCW-40-4

  • Output power (W): 80W

  • Center Wavelength at 25 °C (nm): 808±3

  • Power per bar (W): 40

  • Number of bars in one stack(N): 4

  • Working mode: CW

  • Operation Current (A): ≤22

  • Operating Voltage (V): ≤8

  • Cooling: water

  • Bar arrangement: linear 4bars

  • Operation Temperature(°C): 25±1

  • Applications: to be used in the diode pump laser module CEO-75E

Specifications of Diode Bar STO-HSCW-20-4:

  • Output power (W): 80W

  • Center Wavelength at 25 °C (nm): 808±3

  • Power per bar (W): 20

  • Number of bars in one stack(N): 4

  • Working mode: CW

  • Operation Current (A): £18

  • Operating Voltage (V): £8

  • Cooling: water

  • Bar arrangement: linear 4bars

  • Operation Temperature(°C): 25±1

  • Applications: to be used in the diode pump laser module CEO-75H

3. STO-VS Series CW/QCW Laser Diode Vertical Stacks

STO-VSQCW-MI/MA-100~300-N STO-VSCW-MI/MA-40~100-N
Single Bar Power 100W,150W,200W,300W QCW 40W,60W,100W CW
Bar Total / Stack N=1~20 N=1~20
Bar Pitch 0.5mm~2mm 1.8mm
Wavelength 808nm 808nm

Note: STO-VSQCW/CW-MI/MA-100~300-N can be customized. We provide micro channel water cooling technology and high reliability macro channel water cooling technology. Typical wavelength of the diode bar is 808+/-3nm. However, the wavelength must be specified according to the special pulse width, repetition rate and heat sink designs.

4. Reliable QCW Diode Laser Stacks in Arc Heatsink

We make the QCW laser into an arc, which is beneficial to the lightweight design of the pump structure. Au-Sn packaging technology makes the laser have high reliability even in harsh working environment.diode stack

Feature

  • Wavelength: 808nm or up on requirement

  • Output power: 500 - 4800W

  • Operation mode: QCW

  • Cooling: actively cooled / passively cooled

Benefits

  • Efficient:High output power up into the 4800W.

  • Compact:Arc and lightweight design are easily integrated into pump module.

  • Robust:Shock and vibration resistant.

  • Reliable and high-quality: Gold and Tin (hard solder) mounting. Works even under the most demanding climatic conditions.

  • Wavelength combination: beneficial for full temperature pumping design.

Application

  • High energy research: QCW pumping sources for solid-state lasers.

  • Medical technology: Long-pulse operation, use in esthetics (epilation) and dermatology.

  • Excitation light source for solid-state lasers in the 1320 nm range for parenchyma surgery.

  • Defense: Short-pulse operation, use as a pumping source, for lighting or in LIDAR systems.

  • Industry: pump source for solid-state and fiber lasers.

Model STO-ARCQCW-MA-100~500-N
Optical parameters
Output power (W) QCW 100~500*N
Center wavelength at 25 °C (nm) 808
Number of bars in one stack 1~20
Bar pitch (mm) 0.8~3
Center wavelength variation at 25 °C (nm) ±3/±10
Typical spectral bandwidth (FWHM) <3
Divergence (degree) (FWHM) <39⊥<10‖
Polarization TE
Wavelength shift (nm/℃) ~0.28
Electrical parameters
Working mode QCW
Maximum duty cycle (%) £2%
Pulse length (us) 50~1000
Frequency (Hz) 1~1000
Operation current (A) <=100~500
Operating voltage (V) <=2*N
Typical slope (W/A) >1.1
Electro-optic conversion efficiency (%) >50
Thermal parameters
Operation temperature (℃) -40~60
Storage temperature (℃) -50~85
Storage humidity (%) <70
Cooling TEC/air cooling

Note:

  • STO-ARCQCW-MA-100~500-N represent N*100-500W laser stack which is mounted on an arc heatsink. The laser power of single bar is 100W, 200W, 300W or 500W.

  • The wavelengths of each bar in a single device can be arranged and combined according to the heat dissipation conditions.

  • The above parameters are measured at the heat sink temperature of 25oC.

  • Heat sink structure can be customized according to customer's special requirements

5. Reliable QCW Diode Laser Stacks in Annular Heatsink

The QCW laser is made into a ring, which improves the uniformity of the pump while making use of the lightweight design of the pump structure. Au-Sn packaging technology makes the laser have high reliability even in harsh working environment.diode stack

Feature

  • Wavelength: 808nm or up on request

  • Output power: 500W up to 10kW

  • Operation mode: QCW

  • Cooling: actively cooled / passively cooled

Benefits

  • Efficient: High output power up to 4800W.

  • Compact: Arc and lightweight design is easily integrated into pump module.

  • Robust: Shock and vibration resistant.

  • Reliable and high-quality: Gold and Tin (hard solder) mounting. Works even under the most demanding climatic conditions.

  • Wavelength combination: beneficial for full temperature pumping design.

Application

  • High energy research: QCW pumping sources for solid-state lasers.

  • Medical technology: Long-pulse operation, use in esthetics (epilation) and dermatology.

  • Pump source for solid-state lasers in the 1320nm range for parenchyma surgery.

  • Defense: Short-pulse operation, use as a pumping source, for lighting or in LIDAR systems.

  • Industry: Pump source for solid-state and fiber lasers.

Model STO-ARCQCW-MA-100~500-N
Optical parameters
Output power(W) QCW 100~500*N
Center wavelength at 25 °C(nm) 808
Number of bars in one stack 1~40
Bar pitch(mm) 0.8~3
Center wavelength variation at 25 °C(nm) ±3/±10
Typical spectral bandwidth (FWHM) <3
Divergence(degree)(FWHM) <39⊥<10‖
Polarization TE
Wavelength shift(nm/℃) ~0.28
Electrical parameters
Working mode QCW
Maximum duty cycle(%) £2%
Pulse length(us) 50~1000
Frequency(Hz) 1~1000
Operation current(A) <=100~500
Operating voltage(V) <=2*N
Typical slope(W/A) >1.1
Electro-optic conversion efficiency(%) >50
Thermal parameters
Operation temperature(℃) -40~60
Storage temperature(℃) -50~85
Storage humidity(%) <70
Cooling passively cooled/actively cooled
Flow rate per bar(L/min) 0.3-0.8

Note:

  • STO-ARCQCW-MA-100~500-N represents N*100-500W laser stack which is mounted on an annular heatsink. The laser power of single bar is 100W, 200W, 300W or 500W.

  • The wavelengths of each bar in a single device can be arranged and combined according to the heat dissipation conditions.

  • The above parameters are measured at the heat sink temperature of 25oC.

  • Heat sink structure can be customized according to customer's special requirements

  • The duty cycle is usually less than 2%. In case of special high duty cycle requirements, the laser structure can be customized. Then duty circle up to 20%.

6. Vertical QCW Diode Laser Stacks

We use Gold and Tin to assemble our vertical QCW stacks. This technology makes the laser have high reliability even in harsh working environment.diode stack

Feature

  • Wavelength: 808nm or up on request

  • Output power: 500W up to 10kW

  • Operation mode: QCW

  • Cooling: actively cooled / passively cooled

  • FAC available

Benefits

  • Customized upon request to adjust pumping structure.

  • Robust: Shock and vibration resistant.

  • Reliable and high-quality: Gold and Tin (hard solder) mounting. Works even under the most demanding climatic conditions.

  • Wavelength combination: beneficial for full temperature pumping design.

  • Duty circle up to 20%.

Application

  • High energy research: QCW pumping sources for solid-state lasers.

  • Medical technology: Long-pulse operation, use in esthetics (epilation) and dermatology.

  • Pump source for solid-state lasers in the 1320 nm range for parenchyma surgery.

  • Defense: Short-pulse operation, used as a pumping source, for lighting or in LIDAR systems.

  • Industry: Pump source for solid-state and fiber lasers.

Model STO-VSQCW-MI-MA-100~500-N STO-VSQCW-MI-MA-100~500-N-FAC
Optical parameters
Output power(W) QCW 100~500*N
Output power after collimation(W) 90~450*N
Center wavelength at 25 °C(nm) 808 808
Number of bars in one stack 1~20 1~20
Bar pitch(mm) 0.8~3 0.8~3
Center wavelength variation at 25 °C(nm) ±3/±10 ±3/±10
Typical spectral bandwidth (FWHM) <3 <3
Typical fast axis divergence 95 %(°) 66
Typical slow axis divergence 95 %(°) 10 10
Fast axis divergence (full power)(°) <0.5
Polarization TE TE
Wavelength shift(nm/℃) ~0.28 ~0.28
Electrical parameters
Working mode QCW QCW
Maximum duty cycle(%) £20% £20%
Pulse length(us) 50~1000 50~1000
Frequency(Hz) 1~1000 1~1000
Operation current(A) <=100~500 <=100~500
Operating voltage(V) <=2*N <=2*N
Typical slope(W/A) >1.1 >1.1
Electro-optic conversion efficiency(%) >50 >50
Thermal parameters
Operation temperature(℃) -40~60 -40~60
Storage temperature(℃) -50~85 -50~85
Storage humidity(%) <70 <70
Cooling passively cooled/actively cooled passively cooled/actively cooled
Flow rate per bar(L/min) 0.3-0.8 0.3-0.8

Note:

  • STO-VSQCW-MI/MA-100~500-N. MI means micro channel cooler as a heatsink which needs deionized water. MA means passively cooled or pure water cooled heatsink.

  • STO-VSQCW-MI/MA-100~500-N. 100~500 represents that the laser power per bar can be 100W, 200W, 300W or 500W.

  • The above parameters are measured at the heat sink temperature of 25oC.

  • The wavelengths of each bar in a single device can be arranged and combined according to the heat dissipation conditions.

  • Heat sink structure can be customized according to customer's special requirements

7. Vertical CW Diode Laser Stacksdiode stack

Our vertical stacks can be used to increase the optical output power of your diode lasers To do so, we stack up to 12 mounted laser bars to form a diode laser stack or an assembly. Each of these laser bars individually supplies up to 100W in CW mode. Because of the small gaps between the laser bars, you obtain maximum brightness from the stacks, enabling you to work highly effectively. You can choose between laser diode stacks with a fast-axis (FA) or without collimation.

Feature

  • High optical output power of 100W CW per bar

  • Wavelength: 808 nm ±3nm

  • High efficiency, low divergence

  • Lifetime >10,000 hours, high reliability

  • Collimation: fast axis / without

Application

  • Material processing

  • Medical technology

  • Pumping source for fiber lasers and solid-state lasers.

Model STO-VSCW-MI-40~100-N STO-VSCW-MI-40~100-N-FAC
Optical parameters
Output power(W) CW 40~100*N
Output power after collimation(W) 36~90*N
Center wavelength at 25 °C(nm) 808 808
Number of bars in one stack 1~12 1~12
Bar pitch(mm) 1.8/0.8~3 1.8/0.8~3
Center wavelength variation at 25 °C (nm) ±3/±10 ±3/±10
Typical spectral bandwidth (FWHM) <3 <3
Typical fast axis divergence 95 %(°) 66
Typical slow axis divergence 95 %(°) 10 10
Fast axis divergence (full power)(°) <0.5
Polarization TE TE
Wavelength shift(nm/℃) ~0.28 ~0.28
Electrical parameters
Operation current(A) <=40~100 <=40~100
Operating voltage(V) <=2*N <=2*N
Typical slope(W/A) >1.1 >1.1
Electro-optic conversion efficiency(%) >50 >50
Thermal parameters
Operation temperature(℃) 20~30 20~30
Storage temperature(℃) 0~55 0~55
Storage humidity(%) <70 <70
Cooling deionized water deionized water
Flow rate per bar(L/min) 0.3-0.8 0.3-0.8

Note:

  • STO-VSCW-MI-40~100-N. MI represents we use micro channel cooler as a heatsink which needs deionized water.

  • STO-VSCW-MI-40~100-N. 40~100 represents the laser power per bar can be 40W, 60W or 100W. 100W bar only can be used in cosmetic applications.

8. Laser Diode Stacks for Hair Removal

We supply various diode stacks for laser hair removal. These stacks can custom-designed and –made according to your specific requirements.

laser hair removal

Model No. STO-VS-Ml-100-N
Application Laser hair removal handpiece
Operation mode CW
Bar numbers in one stack N=1-20 bars
Power per sub-mounts 100W
Central wavelength at 25℃ 810nm/755nm/1064nm
Typical Operation current 90A
Maximum Operation current 100A
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