Diode Chip/Bar/Stack

Diode Chip/Bar/Stack

Keywords: diode chip, laser chip, diode bar, diode stack, pumping modul
Jun 16, 2021 View: 7030 Data Sheet

Laser diode chips, bars stacks are the key components in laser pumping, industrial laser processing and advanced machining. We can provide various chips, bars and stacks in the wavelengths 0.75-1.06um, single emitters and chips at single mode and mult

Laser diode chips, bars & stacks are the key components in laser pumping, industrial laser processing and advanced machining. We can provide various chips, bars and stacks in the wavelengths 0.75-1.06um, single emitters and chips at single mode and multi-mode, a few hundred watts, COS/COC/MCC packages. Customized products are available upon request. These products are widely used in laser industrial material processing, medical application, communications, safety protection, intelligent sensing, and scientific research.

STCX Series High-power Diode Laser Chips/Bars/Arrays/Stacks

(1)   High-power Single Emitter Laser Chips – BC Series

 

Optical




Center Wavelengthnm915915976976
Wavelength Tolerancenm±10±10±3±3
Output PowerW25302530
Operating Mode#CWCWCWCW
Fast-axis DivergenceDeg55555555
Slow-axis DivergenceDeg9.59.59.59.5
Spectral Width (FWHM)nm4444
Wavelength Temp Coefficientnm/℃0.30.30.330.33
TE Polarization%97979797
Electrical




Emitter Widthμm195230195230
Cavity Lengthmm4.54.54.54.5
Widthμm400400400400
Thicknessμm145145145145
Geometric




Electro-optic  Conversion Eff.%62626363
Slope EfficiencyW/A1.151.151.11.1
Thershold CurrentA1.51.81.11.5
Operating CurrentA25302530
Operating VoltageV1.651.651.551.55

(2)   High-power Diode Bar – BB Series

Optical






Center Wavelengthnm808808808808940940
Wavelength Tolerancenm±10±10±10±3±3±3
Output PowerW5060100≥500200≥700
Fast-axis DivergenceDeg≤65≤65≤65≤65≤55≤55
Slow-axis DivergenceDeg≤8.5≤8.5≤8.5≤8.5≤8.5≤8.5
Spectral Width (FWHM)nm≤2.5≤2.5≤3≤3.5≤35
TE PolarizationTM/TETETETETETETE
Wavelength Temp Coefficientnm/℃0.280.280.280.280.30.3
Electrical






Electro-optic Conversion Eff%≥55≥55≥55≥58≥63≥63
Slope EfficiencyW/A1.251.251.251.2511.15
Threshold CurrentA81215252525
Operating CurrentA5060105≤430220650
Operating VoltageV1.81.81.82.01.551.7
Pulse Widthus---200-500
Pulse frequencyHz---400-160
Pulse duty cycle%---8-8
Geometric






Number of Emitters#194949342434
Emitter Widthμm150100100232200232
Emitter Pitchμm500200200290400290
Fill Factor%305050805080
Cavity Lengthmm1.01.01.51.532
Bar Thicknessμm145145145115115115
Bar Lengthmm10101010.2510.2510.25
Thermal






Operating Temperature252525252025
Storage Temperature40~80-40~8040~8040~80-40~8040~80
Flow VelocityL/min/0.250.250.200.250.25

(3)   High-power Diode VCSEL Chips – TOF series

 

Optical




Center Wavelength@Iopnm808850940940
Spectral width (half width)nm2222
Wavelength shift / temperaturenm/℃0.070.070.070.07
Emitter apertureμm10101010
Emitter minimum pitchμm44473340
Emitter number/6211216305364
Output PowerW3.142.13.1
Operating currentA3.552.83.5
Power consumptionW7105.67
Operating VoltageV2222
Operating efficiency%35404040
Threshold currentA0.71.20.380.47
Divergence angle°22222020
Geometric




Emitter lengthμm9161535525916
Emitter widthμm9011560615610
Chip lengthμm12061845695996
Chip widthμm10061670795890
Chip thicknessμm100100100100

(4)   High-power Diode VCSEL Chips – SL Series

 

Optical



Center Wavelength@Iopnm934940946
Spectral width (half width)nm
2
Wavelength shift / temperaturenm/℃
0.07
Emitter apertureμm
8
Emitter minimum pitchμm
21
Emitter number(Area A)-
377
Emitter number(Area B)-
6
Output Power(Area A)W1.31.51.7
Output Power(Area B)W
0.024
Single point powerW
0.004
Operating current(Area A)A
3.6
Operating current(Area B)A
0.06
Power consumption(Area A)W
3.6
Power consumption(Area B)W
0.06
Operating VoltageV
2
Operating efficiency%
4045
Threshold current(Area A)A
0.38
Threshold current(Area B)A
0.006
Divergence angle°
20
Geometric



Luminous zone lengthμm
523
Light-emitting area widthμm
548
Chip lengthμm758778798
Chip widthμm701721741
Chip thicknessμm90100110

(5)   High-power Diode VCSEL Chips – LI Series

Optical


Center Wavelengthnm905940
Spectral width (half width)nm22
Wavelength shift / temperaturenm/℃0.070.07
Emitter apertureμm1212
Emitter minimum pitchμm2222
Emitter number/136136
Output PowerW6060
Operating currentA1515
Power consumptionW300300
Operating VoltageV2525
Operating efficiency%2020
Threshold currentA0.20.2
Divergence angle°2020
Geometric


Emitter lengthμm273273
Emitter widthμm288288
Chip lengthμm520520
Chip widthμm401401
Chip thicknessμm100100

(6)   High-power Diode Laser Device – COS Series

Optical




Center Wavelengthnm915915976976
Wavelength Tolerancenm±10±10±3±3
Output PowerW25302530
Operating Mode#CWCWCWCW
Fast-axis DivergenceDeg55555555
Slow-axis DivergenceDeg9.59.59.59.5
Spectral Width (FWHM)nm4444
Wavelength Temperature Coefficientnm/℃0.30.30.330.33
TE Polarization%97979797
Electrical




Electrio-optic Conversion Eff%62626363
Slope EfficiencyW/A1.151.151.11.1
Thershold CurrentA1.51.81.11.5
Operating CurrentA25302530
Operating VoltageV1.651.651.551.55
Geometric




Emitter Widthμm195230195230
Cavity Lengthmm4.54.54.54.5
Widthμm400400400400
Thicknessμm145145145145

(7)   High-power Diode Laser Devices – MCC Series

Optical






Center Wavelengthnm808808808808940940
Wavelength Tolerancenm±10±10±10±10±3±3
Output PowerW5060100≥500200200
Fast-axis DivergenceDeg≤65≤65≤65≤65≤55≤55
Slow-axis DivergenceDeg≤8.5≤8.5≤8.5≤8.5≤8.5≤8.5
Spectral Width (FWHM)nm≤2.5≤2.5≤3≤3.5≤3≤3
Polarization ModeTM/TE



TETE
Wavelength Temperature Coefficientnm/℃0.280.280.280.280.30.3
Electrical






Electrio-optic Conversion Eff%≥55≥55≥55≥58≥63≥63
Slope EfficiencyW/A1.251.251.251.2511.15
Thershold CurrentA81215252525
Operating CurrentA5060105≤430220650
Operating VoltageV1.81.81.82.01.551.7
Pulse Widthus---200-500
Pulse frequencyHz---400-160
Pulse Duty Cycle%---8-8
Geometric






Number of Emitters#194949342434
Emitter Widthμm150100100232200232
Emitter Pitchμm500200200290400290
Fill Factor%305050805080
Cavity Lengthmm1.01.01.51.532
Bar Thicknessμm145145145115115115
Bar Lengthmm10101010.2510.2510.25
Thermal






Operating Temp.252525252025
Storage temp.-40~80-40~80-40~80-40~80-40~80-40~80
Water Flow RateL/min/0.250.250.200.250.25

(8)   High-power Diode Laser Stacks – MCP Series

Optical



Center Wavelengthnm808808808
Wavelength Tolerancenm±10±10±3
Output PowerW60100300
Number of Bars#2 ~ 602 ~ 602 ~ 60
Spectral Width (FWHM)nm≤8≤84
Operating Mode#CWCWQCW
Fast-axis DivergenceDeg≤42≤4240
Slow-axis DivergenceDeg≤10≤1010
Wavelength Temp Coefficientnm/℃0.280.280.28
Electrical



Power Conversion Efficiency%505050
Slope Efficiency/BarW/A≥1.1≥1.11.1
Threshold CurrentA4.54.54.5
Operating CurrentA0.160.16290
Operating Voltage/BarV≤2≤21.8
Thermal



Operating Temperature15 ~ 3515 ~ 3525
Storage Temperature0~550~550~55
Bar/Water Velocity/Barl/m0.3~0.50.3~0.50.3
Entrace Maximum Pressurepsi555555
Water Type-DI WaterDI WaterDI Water
Deionized Water Resistivity(DI)kΩ·cm200~500200~500200~500
Pure Water Filter Particlesμm<20<20<20

(9)   High-power Diode Laser Stacks – QCP Series

Optical


Center Wavelengthnm808808
Wavelength ToleranceW±3±10
Bar Output Power/Bar%30040
Number of Bars%2 ~ 2460
Total Output Powerμm-2400
Bar-to-Bar Spacing-0.4 ~ 1.80.9
Spectral Width (FWHM)-48
Pulse Widthm50-50010-100
Repetition Rate
1-2001-10
Fast-axis Divergence(FWHM)nm4040
Slow-axis Divergence(FWHM)mW1010
Wavelength Temp Coefficient
0.280.28
Electrical


Electro-optic Conversion Eff%5050
Slope Efficiency/BarW/A1.11.1
Threshold CurrentA2010
Operating CurrentA30050
Operating Voltage/BarV21.8
Thermal


Water Type-Pure WaterPure Water
Operating Temperature2525
Storage Temperature-40-85-40-85

(10)  High-power Diode Laser Devices – TO Series

Optical





MinTypicalMax
Center Wavelengthnm820830840
Wavelength Tolerancenm
±10
Output PowerW
1.0
Spectral Width(FWHM)nm
3.04.0
Wavelength Temp Coefficientnm/℃
0.3
Electrical



Electro-optic Conversion Eff%3642
Slope EfficiencyW/A1.051.1
Threshold CurrentA
0.380.45
Operating CurrentA
1.281.40
Operating VoltageV
1.82.2
Thermal



Operating Temperature02540
Storage Temperature
-20~70

SBN Series Diode Laser Chips/Bars/Stacks

We, a diode laser company, manufacture high-power diode lasers and systems in a wide range of output powers and wavelengths Including wafer growth and slicing, fiber coupling and bar stacking laser. More than 1000 models are for your choice. Established in 2011,  over 60 technicians and 2 scientists, 20 of them are PHD degree. Production site is 1000Class Lab Clean Room with 5000sqm. Our current turnover per year is about 20million US Dollars with 30% growth year on year. Our strengths are in talent employees, quality engineering, process control, product development and volume manufacturing.

1.  Bare Laser Chip/Bar

Optical

Central Wavelength755nm,808nm,830nm,905nm,940nm,976nm,1550nm
Wavelength Tolerance±10nm, ±5nm, ±3nm
Output Power2W,10W,20W,50W,100W,150W,200W,300W,500W,1000W
Working ModeCW/QCW/Single Mode
Number of Emitter1~60
Filling Factor30%~75%
Cavity Length1000um/1500um/2000um/3000um/4000um

Electrical

Working Current1~300A
Threshold Current0.5~50A
Working Voltage1.8~2.1V
Power Conversion Eff30%~60%

Thermal

Working Temp25℃
Storage Temp-30-80℃
Wavelength Temp Coefficient~0.3nm/℃

2.  Stack Array Laser Diodes

Optical

Central Wavelength755nmm, 808nm, 915nm, 940nm, 976nm, 1064nm
Wavelength Tolerance±10nm, ±5nm, ±3nm
Output Power Per Bar20W/40W/80W/100W/200W/300W~30000W
Number of Bars1~60pcs
Working ModeCW/QCW

Electrical

Working Current1~300A
Threshold Current0.5~50A
Working Voltage1~40V
Power Conversion Eff30%~60%

Optional functions: FAC lens, SAC lens.

Thermal

Working Temp-20~70℃
Storage Temp-30-80℃
Wavelength Temp Coefficient~0.3nm/℃
Cooling WayWater Cooled/TEC/Conduction Cooled/Air Cooled

STHT Series Diode Chips/Emitters/Bars/Arrays

1. Unmounted Single Diode Emitters and Bars

Semiconductor lasers are one of most of today’s industrial lasers. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

We have been focusing on the semiconductor wafer technology from 1998, delivers the multimode high power at wavelengths between 808 and 1064nm.

  • High Power multimode unmounted bars up to 40W CW and 200W QCW output

  • Unmounted single emitters up to 2W CW Power

  • Available wavelengths include 808nm and 980nm

Part No.WavelengthOutput PowerEmitter WidthCavity LengthWidth
STHT-CLDM-0808-0500-02 808±5nm500mW50µm600µm500µm
STHT-CLDM-0808-1000-02 808±5nm1W100µm900µm500µm
STHT-CLDM-0808-2000-02808±5nm2W100/150µm1500/1000µm500µm
STHT-CLDM-0980-0500-02980±10nm500mW50µm600µm500µm
STHT-CLDM-0980-1000-02980±10nm1W100µm900µm500µm
STHT-CLDM-0980-2000-02980±10nm2W150µm1000µm500µm
Unmounted BarsWavelengthOutput PowerOperation ModeFill FactorNumber of single emitters
STHT-LDAC1-0808-0020808±5nm20WCW20%19
STHT-LDAC1-0808-0040808±5nm40WCW30%19
STHT-LDAQ1-0808-0100808±5nm100WQCW87%100
STHT-LDAQ1-0808-0200808±5nm200WQCW71%58

2. Packaged Diode Single Emitters

LDM series packaged single emitters are Fabry-Perot cavity semiconductor lasers based on Quantum-well epitaxy and ridge waveguide structure design. Sintec packaged single emitters provide excellent reliability and performance.

  • Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm

  • Package designs include TO mounts, COS mounts, C-mounts and F-mounts

  • Provide beam shaping services like fast-axis compression according to customer demands

Part No.Wavelength

nm

Output Power(20°C)Operating CurrentOperating VoltagePackage
STHT-LDM-0635-500m635500mW≤1.35A≤2.3VC-Mount / TO3
STHT-LDM-0650-300m650300mW≤1.0A≤2.3VC-Mount / TO3
STHT-LDM-0670-300m670300mW≤1.0A≤2.3VC-Mount / TO3
STHT-LDM-0808-200m808200mW≤220mA≤2.0VTO56
STHT-LDM-0808-300m808300mW≤330mA≤2.0VTO56
STHT-LDM-0808-500m808500mW≤560mA≤2.0VTO9
STHT-LDM-0808-001W8081W≤1.24A≤2.0VTO9
STHT-LDM-0808-002W8082W≤2.1A≤2.0VCoS/ F-Mount /C-Mount
STHT-LDM-0808-003W8083W≤3.3A≤2.0VCoS/ F-Mount/ C-Mount
STHT-LDM-0808-005W8085W≤5.5A≤2.0VCoS/ F-Mount/ C-Mount
STHT-LDMP-0808-007W8087W (ms pulse)≤7.8A≤3.0VTO56
STHT-LDM-0808-008W8088W≤10A≤2.0VCoS/ F-Mount/ C-Mount
STHT-LDM-0830-001W8301W≤1.3A≤2.0VCoS/ C-Mount
STHT-LDMP-0830-005W8305W (ms pulse)≤5.30A≤3.0VTO56
STHT-LDM-0915-010W91510W≤11A≤2.2VCoS/ F-Mount
STHT-LDM-0940-003W9403W≤3.2A≤2.0VCoS/ F-Mount/ C-Mount
STHT-LDM-0980-500m980500mW≤700mA≤2.0VTO9
STHT-LDM-0980-001W9801W≤1.3A≤2.0VTO9
STHT-LDM-0980-002W9802W≤2.3A≤2.0VCoS/ C-Mount
STHT-LDM-0980-003W9803W≤3.6A≤2.0VCoS/ C-Mount
STHLDMP-980-005W9805W (ms pulse)≤5.8A≤3.0VTO56

3. Diode Laser Packaged Bars and Arrays

LDA series high power packaged bars provide OEM customers with scalable power up to kilowatts for pumping, industrial, medical and applications. The packaged laser bars can be configured for enhanced brightness through stacking, scaled linearly or vertically for optimized light and material integration. LDA series offer:

  • Wavelengths at 808nm to 1100nm range

  • Modular and Compact design for ease of integration

  • Up to 100W CW and 300W QCW laser diode bars for high brightness

  • Packaged 10mm laser diode bar, various standard bar configurations (custom bar configurations available on request)

Packaged BarsCenter WavelengthOutput PowerOperation ModeCooling
STHT-LDAC1-0808-020W808nm20WCWConduction-cooled
STHT-LDAC1-0808-040W808nm40WCWConduction-cooled
STHT-LDAC1-0808-060W808nm60WCWConduction-cooled
STHT-LDAC1-09xx-060W9xxnm60WCWConduction-cooled
STHT-LDAC1-1064-040W1064nm40WCWConduction-cooled
STHT-LDAC1-0808-040W808nm40WCWMicrochannel-cooled
STHT-LDAC1-0808-060W808nm60WCWMicrochannel-cooled
STHT-LDAC1-0808-100W808nm100WCWMicrochannel-cooled
STHT-LDAC1-09xx-060W9xxnm60WCWMicrochannel-cooled
STHT-LDAC1-1064-040W1064nm40WCWMicrochannel-cooled
STHT-LDAQ1-0808-100W 808nm100WQCWConduction-cooled
STHT-LDAQ1-0808-200W 808nm200WQCWConduction-cooled
STHT-LDAQ1-0808-300W 808nm300WQCWConduction-cooled
Vertical ArraysCenter WavelengthPower per barOperation ModeCooling
STHT-LDAC2-0808-xxx808nm40-100WCWMicrochannel-cooled
STHT-LDAC2-09xx-xxx9xxnm40-100WCWMicrochannel-cooled
STHT-LDAC2-1064-040W1064nm40WCWMicrochannel-cooled
STHT-LDAQ2-0808-xxx808nm100-300WQCWConduction-cooled
STHT-LDAQ2-0940-xxx940nm100-200WQCWConduction-cooled
Horizontal ArraysCenter WavelengthPower per barOperation ModeCooling
STHT-LDAC3-0808-xxx808nm40-100WCWMicrochannel-cooled
STHT-LDAC3-09xx-xxx9xxnm40-100WCWMicrochannel-cooled
STHT-LDAC3-1064-040W1064nm40WCWMicrochannel-cooled
STHT-LDAC3-0808-xxx808nm40-100WCWMacrochannel-cooled
STHT-LDAC3-09xx-xxx9xxnm40-100WCWMacrochannel-cooled
STHT-LDAC3-1064-040W1064nm40WCWMacrochannel-cooled
STHT-LDAQ3-0808-xxx808nm100-300WQCWMacrochannel-cooled
STHT-LDAQ3-0940-xxx940nm100-200WQCWMacrochannel-cooled
  • 9xxnm center wavelength includes 915nm/940nm/980nm.

  • Please contact us to discuss your specific requirements.

4. Diode Laser Arrays for Hair Removal

The vertical arrays specially designed for hair removal application, can stack up to 10 packaged laser bars to form a high power diode laser assembly. Each of these laser bars individually provides up to 100watts in CW mode. The small gaps between the laser bars make the module obtain maximum brilliance from the arrays, enabling the module to work with high efficiency

  • Power up to 1000W

  • Compact designs

  • Reliable package with hard solder

Part No.STHT-LDAQ2-0808-300STHT-LDAQ2-0808-500STHT-LDAQ2-0808-800STHT-LDAQ2-0808-1000
Operation ModeQCWQCWQCWQCW
Center Wavelength nm808 ± 10808 ± 10808 ± 10808 ± 10
Output Power W3005008001000
Bar Numbers5/ 610810
Operating Current A≤50≤50≤100≤100
Operating Voltage V/bar≤2≤2≤2≤2
Pulse Width ms≤400≤400≤200≤200
Duty Cycle %≤40≤40≤20≤20
Bar pitch mm222.82.8
Emitting Area mm10×1110×19.510x2010x25.5
Operating Temp. ℃15~3515~3515~3515~35
Storage Temp. ℃-10~50-10~50-10~50-10~50
Flow Rate L/min>4>4>4>4

STR Series Diode Chips/bars

1. Single Emitter

Single-emitter laser diode (SE) chips are the basic built block for high-power and high-brightness semiconductor laser modules. We manufacture single chips with a variety of output powers and wavelengths.

diode chip, single emitter

Part numberWavelength, nmOutput powerCurrent/voltageEmitting width, umDivergence, degSize, um
STR-638A-110-1-1.5-SE6381W1.4A/2.1V1108/351500x400x150
STR-755A-350-8-2.5-SE7558W8A/1.9V3509/382500x500x150
STR-808A-150-3-1-SE8083W3A/1.9V1508/241000x500x150
STR-808A-190-10-4-SE80810W10A/1.8V19010/384000x500x150
STR-808A-350-10-2.5-SE80810.5W10A/1.8V3508/362500x500x150
STR-880A-190-10-4-SE88010W12A/1.8V1908/322500x500x150
STR-880A-350-10-2.5-SE8809.8W10A/1.8V3508/342500x500x150
STR-905A-74-25-0.75-SE90525W7A/7.2V7413/30750x400x150
STR-905A-150-50-0.75-SE90550W14A/7.6V15012/31750X400X150
STR-905A-200-75-0.75-SE90575W20A/8.4V20012/30750X400X150
STR-905B-200-25-0.75-SE90525W20A/3.8V20014750X600X150
STR-905-38-15-0.75-SE90515W5A/9.2V3835/30750X400X150
STR-905C-70-25-0.75-SE90525W8A/8.2V7017/30750X400X150
STR-905C-300-75-0.75-SE90575W22A/9.5V30012/30750x400x150
STR-905D-300-100-0.75-SE905100W22A/11V30013/30750x400x150
STR-915A-96-12-4.8-SE91512W12A/1.6V9610/264800x500x150
STR-915A-190-20-4-SE91520W20A/1.7V19010/264000x500x150
STR-940A-96-12-4.8-SE94012W12A/1.6V9610/264800x500x150
STR-940A-190-20-4-SE94020W20A/1.7V19010/264000x500x150
STR-976A-96-10-4.8-SE97610W10A/1.8V969/274800x500x150
STR-976A-96-12-4.8-SE97612W12A/1.6V9610/264800x500x150
STR-976A-96-13-4-SE97613W12.5A/1.5V968/284000x500x150
STR-976A-190-15-4-SE97615.5W15A/1.6V19010/294000x500x150
STR-976A-190-20-4-SE97620W20A/1.7V19010/264000x500x150
STR-1064A-190-10-4-SE106410W14A/0.9V19010/304000x500x150
STR-1064A-350-10-2.5-SE106410W13A/1.6V35010/292500x500x150
STR-1470A-96-1.5-1-SE14701.5W4A/1.4V9611/311000x500x150
STR-1470A-96-3-2-SE14703W9A/1.5V9611/282000x500x150
STR-1550A-96-1.5-1-SE15501.5W4A/1.4V9611/311000x500x150
STR-15500A-96-3-2-SE15503W9A/1.5V9611/282000x500x150

2. Bare Bars

Bare bar is an array of individual semiconductor laser chips, with combined output power from dozens of Watts to a few hundred Watts. Our proprietary facet passivation process ensures the reliability required by the most stringent applications.

diode bar

In the following table, WL means wavelength, I/V means operation current/voltage, N means the numbers of emitters, P/width means period (um)/emitter width (um), L/W/T means length/width/thickness of the bar.

Part numberWL nmModePowerI/VNP/Width umFillingL/W/T um
STR-755A-48-80-23-1.5-BAR755QCW80W86A/1.9V23499/19048%1500x10000x150
STR-808A-30-50-19-1-BAR808CW50W45A/1.7V19500/15030%1000x98000x150
STR-808A-48-100-23-1.5-BAR808CW100W88A/1.75V23400/19048%1500x9800x150
STR-808A-72-300-34-1.5-BAR808QCW300W190A/1.85V34290/21072%1500x10000x150
STR-940A-30-100-19-2-BAR940CW100W95A/1.65V19500/15030%2000x10000x150
STR-940A-50-200-24-3-BAR940CW200W195A/1.63V24400/20050%3000x10200x150
STR-940A-76-600-40-2-BAR940QCW600W600A/1.8V40250/19076%2000x10400x150
STR-976A-10-35-5-4-BAR976CW35W35A/1.7V51000/10010%4000x5000x150
STR-1470A-18-8-6-2-BAR1470CW8W24A/1.4V6400/9618%2000x3000x150

STL Series Diode Laser Chips & Bars

diode laser chip

  • High electrical-optical conversion efficiency

  • >20000 hours lifetime

  • Customized products available

  • Short lead time

  • Quick response

Part numberWavelengthStructureOperationPowerOperation current/voltage
STL-UMC-190-915-TE-18-4.0915nmSingle chipCW18W19.5A/1.8V
STL-UMC-95-915-TE-10-4.0915nmSingle chipCW10W11A/1.7V
STL-UMC-28-915-TE-0.5-0.5915nmSingle chipCW500mW0.55A/2V
STL-UMC-200-905-TE-75-1.0905nmSingle chipQCW75W30A/6.3V
STL-UMC-135-905-TE-50-1.0905nmSingle chipQCW50W23A/6.3V
STL-UMC-70-905-TE-25-1.0905nmSingle chipQCW25W10A/6.3V
STL-UMC-28-896-TE-0.5-1.0896nmSingle chipCW0.5W0.55A/1.8V
STL-UMC-200-880-TE-10-4.0880nmSingle chipCW10W10A/1.65V
STL-UMC-100-880-TE-6-4.0880nmSingle chipCW6W6.5A/1.65V
STL-UMC-47-830-TE-2.0-2.0830nmSingle chipCW2W2A/1.8V
STL-UMC-200-808-TE-10-4.0808nmSingle chipCW10W10A/1.75V
STL-UMC-390-808-TE-10-2.0808nmSingle chipCW10W10A/1.75V
STL-UMC-200-808-TE-8-4.0808nmSingle chipCW8W8.5A/1.75V
STL-UMC-200-808-TE-5-2.0808nmSingle chipCW5W4.8A/1.75V
STL-UMC-100-808-TE-3-2.0808nmSingle chipCW3W2.8A/1.75V
STL-UMC-100-785-TE-2-2.0785nmSingle chipCW2W2.2A/1.75V
STL-UMC-190-976-TE-20-4.0976nmSingle chipCW20W23A/1.8V
STL-UMC-95-976-TE-12-4.0-D2976nmsingle chipCW12W13A/1.65V
STL-UMC-95-976-TE-12-4.0980nmSingle chipCW12W13A/1.75V
STL-UMC-190-940-TE-20-4.0940nmSingle chipCW20W23A/1.8V
STL-UMC-95-940-TE-12-4.0940nmSingle chipCW12W13A/1.75V
STL-UMC-390-808-TE-10-2.0808nmSingle chipCW10W10A/1.75V
STL-UMC-100-785-TE-2-2.0785nmSingle chipCW2W2.2A/1.75V
STL-UMB-10-5-976-TE-40-4.0976nmbarCW40W41A/1.6
STL-UMB-80-37-940-TE-1000-4.0940nmbarQCW1000W550A/3.6V
STL-UMB-35-24-940-TE-200-3.0940nmbarQCW200W212A/1.65V
STL-UMB-75-60-808-TE-500-1.5808nmbarQCW500W460A/2.1V
STL-UMB-75-30-808-TE-150-1.5808nmbarQCW150W145A/1.9V
STL-UMB-50-47-808-TE-100-1.5808nmbarCW100W105A/1.8V
STL-UMB-50-47-808-TE-60-1.0808nmbarCW60W63A/1.8V
STL-UMB-50-47-808-TE-100-1.5-2808nmbarCW100W100A/1.8V
STL-UMB-75-30-808-TE-150-1.5808nmbarQCW150W145A/1.9V
STL-UMB-75-60-808-TE-300-1.5808nmbarQCW300W280A/1.9V
STL-UMB-75-60-808-TE-300-1.5-D1808nmbarQCW300W280A/1.9V
STL-UMB-75-60-808-TE-200-1.0808nmbarQCW200W190A/1.9V
STL-UMB-30-19-808-TE-50-1.0808nmbarCW50W48.5A/1,8v

STD Series Laser Chips, Bars & Stacks

1. STD Series Diode Laser Chips & Bars

Features:

  • High output power

  • High electrical-optical conversion efficiency

  • High brightness

  • High reliability

Technical Advantages:

  • High efficient epitaxial structure design

  • High-quality epitaxial material growth

  • Special passivation method for cavity surface

laser diode chip

Part numberWavelengthPowerOperation current/voltageRemark
STD-UMC-100-808-TE-6-4.0808nm6W5.7A/1.75VCW single chip
STD-UMC-190-808-TE-10-4.0808nm10W9.5A/1,75CW single chip
STD-UMC-190-808-TE-12-4.0808nm12W10.5A/1.75VCW single chip
STD-UMC-100-915-TE-12-4.5915nm12W10.5A/1.62VCW single chip
STD-UMC-160-915-TE-18-5.0915nm18W17.5A/1.65VCW single chip
STD-UMC-190-915-TE-22-5.0915nm22W20.0A/1.68VCW single chip
STD-UMC-230-915-TE-25-5.0915nm25W24.5A/1.70VCW single chip
STD-UMC-100-945-TE-12-4.5945nm12W11.5A/1.70VCW single chip
STD-UMC-160-945-TE-18-5.0945nm18W17.5A/1.70VCW single chip
STD-UMC-190-945-TE-22-5.0945nm22W21.5A/1.70VCW single chip
STD-UMC-230-945-TE-25-5.0945nm25W25.0A/1.70VCW single chip
STD-UMC-100-975-TE-12-4.5975nm12W12.5A/1.52VCW single chip
STD-UMC-100-975-TE-15-4.5975nm15W16.0A/1.55VCW single chip
STD-UMC-190-975-TE-22-5.0975nm22W23.5A/1.55VCW single chip
STD-UMC-230-975-TE-25-5.0975nm25W27.0A/1.55VCW single chip
STD-UMC-230-975-TE-30-5.5975nm30W33.0A/1.55VCW single chip
STD-UMB-30-19-808-TE-50-1.5808nm50W42.0A/1.80VCW bar
STD-UMB-50-47-808-TE-100-1.5808nm100W92.0A/1.80VCW bar
STD-UMB-50-47-940-TE-120-2.0940nm120W115A/1.65VCW bar
STD-UMB-50-47-976-TE-200-4.0976nm200W195A/1.55VCW bar
STD-UMB-75-37-808-TE-300-1.5808nm300W250A/2.00VQCW bar

2. Pump Modules & Stacks

  • AuSn hard solder packaging construction

  • High duty cycle, high energy density

  • Filtered water, alternative cooling fluids

  • Small pitch, compact size

  • Optional seal band optical waveguide assemble

  • Optional fast collimation

  • Used for laser pumping, hair removal etc.

2.1 Pump Modules

laser diode chips laser diode chip stack

Part numberStructureLaser powerLaser wavelength
STD-HS12Macro channel stack600W-16500W760nm-1100nm
STD-GS20Conduction cooling stack4000W-1000W760nm-1100nm
STD-L5Macro channel horizontal stack300W-3000W760nm-1100nm
STD-E27Macro channel stack4000W-10000W760nm-1100nm
STD-MAMicro channel stack2500W-15000W760nm-1100nm
STD-HM7Whole micro channel stack700W-3500W760nm-1100nm

(1) Macro channel stack STD-HS12diode chip, bar, stack

  • AuSn hard solder packaging construction

  • High duty cycle, high energy density

  • Filtered water, alternative cooling fluids

  • Small pitch, compact size

  • Optional seal band optical waveguide assemble

  • Optional fast collimation

  • Used for laser pumping, hair removal etc.

Wavelength760-1100nm
Peak power, W600120072001000016500
Operation modeQCW
Operation current, A5095550450450
Duty cycle up to, %2515510.4
Number of bars12121220Up to 33
Bar to bar pitch, mm1.21.21.20.930.4
Electric/optic conversion efficiency, %58Up to 60565656
Fast axis divergence FWHM, deg35, optional FAC<435
Slow axis divergence FWHM. deg10
Dimension, mm28.6x24x11.5mm

Typical pulse energy:

Pulse widthFrequency (Hz)Iop
12345678910
10 ms131312.712.751312.7131312.912.995A
20 ms212121.721.521.421.72121.42020.985A
30 ms3131.53232------60A
40 ms434142-------60A
50 ms5351---------
60 ms6159.5---------
70 ms70----------
80 ms50----------
90 ms54----------
100ms60----------

Remark: cooling water: T 25deg, flow rate 4.5-5.0L/min

(2) Conduction cooling stack STD-GS20diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Optional fast-axis collimation

  • Small pitch, compact size

  • Optional seal protection

  • Multi-wavelength in a single array

  • Used for laser pumping, hair removal etc.

Wavelength760-1100nm
Peak power, W4000600010000
Operation modeQCWQCWQCW
Operation current, A200280450
Duty cycle up to, %1.210.4
Pulse width, usUp to 1000600200
Number of bars20
Bar to bar pitch, mm0.73
Electric/optic conversion efficiency, %525658
Fast axis divergence FWHM, deg35, optional FAC < 4
Slow axis divergence FWHM. deg10
Dimension, mm37.5x10x9

(3) Macro channel horizontal stack STD-L5diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Contact size

  • Used for pumping

Wavelength760-1100nm
Peak power, W30015003000
Operation modeCWQCWQCW
Operation current, A55280550
Number of bars5
Bar to bar pitch, mm0.73
Electric/optic conversion efficiency, %565658
Fast axis divergence FWHM, deg35
Slow axis divergence FWHM. deg10
Dimension, mm70x14x10

(4) Macro channel stack STD-E27diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Optional fast axis collimation

  • Small pitch, compact size

  • Optional seal protection

  • Multi-wavelength in a single array

  • Used for laser pumping

Wavelength760-1100nm
Peak power, W4000600010000
Operation modeQCWQCWQCW
Operation current, A200280450
Duty cycle up to, %850.4
Pulse width, usUp to 1000600200
Number of bars20
Bar to bar pitch, mm2.21
Electric/optic conversion efficiency, %525658
Fast axis divergence FWHM, deg35, optional FAC < 4
Slow axis divergence FWHM. deg10
Dimension, mm37.5x12x13.4

(5) Whole micro channel stack STD-HM7laser diode chip bar stack

  • AuSn hard solder packaging construction

  • High power density

  • Narrow spectrum

  • Filtered water, alternative cooling fluids

  • Used for laser pumping & hair removal

Wavelength760-1100nm
Peak power, W70021003500
Operation modeQCWQCWQCW
Operation current, A100280450
Duty cycle up to, %4084
Pulse width, usUp to 1000600200
Number of bars7
Bar to bar pitch, mm2.0
Electric/optic conversion efficiency, %605658
Fast axis divergence FWHM, deg35
Slow axis divergence FWHM. deg10
Dimension, mm30x13x4.95

2.2 Stacks for Hair Removal

laser diode chip & stack

Part numberStructureLaser powerLaser wavelength
STD-HH05Macro channel stack300W/500W760nm-1100nm
STD-HL07Macro channel stack300W-700W760nm-1100nm
STD-HS12Macro channel stack600W-1200W760nm-1100nm

(1) Macro channel stack STD-HH05diode laser chip bar stack

  • AuSn hard solder packaging construction

  • Suitable for long pulse width operation

  • Filtered water, alternative cooling fluids

  • Seal protection

  • High duty cycle

  • Used for hair removal & laser pumping

Typical Specifications

Wavelength760-1100nm
Peak power, W300500
Operation modeQCWQCW
Operation current, A9595
Duty cycle up to, %2010
Pulse width, us200100
Number of bars35
Bar to bar pitch, mm52.9
Electric/optic conversion efficiency, %5858
Fast axis divergence FWHM, deg35
Slow axis divergence FWHM. deg10
Dimension, mm42x25.27x20

Operation Conditions


STD-HH05-808STD-HH03-300-808
Peak power per bar, W1008060100
Operation current, A95806595
Pulse width, msMax. frequency, Hz
1030404040
2010152020
3010121313
4010101010
505688
604566
803454
1002342
200-121
400--1-

(2) Macro channel stack STD-HL07laser diode chip bar stack

  • AuSn hard solder packaging construction

  • Suitable for long pulse width operation

  • Filtered water, alternative cooling fluids

  • Seal protection

  • High duty cycle

  • Used for hair removal & laser pumping

Typical Specifications

Wavelength760-1100nm
Peak power, W300500600700
Operation modeQCWQCWQCWQCW
Operation current, A50509595
Duty cycle up to, %40401010
Pulse width, usUp to 400Up to 400100100
Number of bars601067
Bar to bar pitch, mm2.22.23.42.9
Electric/optic conversion efficiency, %58585858
Fast axis divergence FWHM, deg35
Slow axis divergence FWHM. deg10
Dimension, mm39x40x36

Operation Conditions


STD-HL06-600-808
STD-HL07-700-808
STD-HL06-300-808
STD-HL10-500-808
Peak power per bar, W100806050
Operation current, A95806550
Pulse width, msMax. frequency, Hz
10304040440
2010152020
3010121313
4010101010
505688
604566
803455
1002344
200-122
400--11

(3) Macro channel stack STD-HS12diode laser chip bar stack

  • AuSn hard solder packaging construction

  • High duty cycle, high energy density

  • Filtered water, alternative cooling fluids

  • Small pitch, compact size

  • Optional seal band optical waveguide assembly

  • Optional fast-axis collimation

  • Used for hair removal & laser pumping

Wavelength760-1100nm
Peak power, W600120072001000016500
Operation modeQCW
Operation current, A5095550450450
Duty cycle up to, %2515510.4
Pulse width, us25100.60.40.2
Number of bars12121220Up to 33
Bar to bar pitch, mm1.21.21.20.730.4
Electric/optic conversion efficiency, %58Up to 60565656
Fast axis divergence FWHM, deg35, optional FAC<435
Slow axis divergence FWHM. deg10
Dimension, mm28.6x24x11.5mm

STD-HS12-1200-808 typical pulse energy (J/cm2):

Pulse widthFrequency (Hz)Iop
12345678910
10 ms131312.712.751312.7131312.912.995A
20 ms212121.721.521.421.72121.42020.985A
30 ms3131.53232------60A
40 ms434142-------60A
50 ms5351---------
60 ms6159.5---------
70 ms70----------
80 ms50----------
90 ms54----------
100ms60----------

Remark: cooling water: T 25deg, flow rate 4.5-5.0L/min

STO Series High Power Laser Diode Bars/Stacks

diode pump gain module

1. Laser Diode Bars

ModelSTO-CS20STO-CS40STO-CS60STO-CS100QSTO-CS200QSTO-CS300Q
Output Power20W40W60W100W200W300W
Wavelength808 / 880 / 915 / 976 / 980 nm808 / 880 / 915 / 976 / 980 nm808 / 880 / 915 / 976 / 980 nm808 / 880 / 915 / 976 / 980 nm808 / 880 / 915 / 976 / 980 nm808 / 880 / 915 / 976 / 980 nm
Operation ModeCWCWCWQCWQCWQCW
Duty CircleCWCWCW≤5%≤5%≤5%
Pulse WidthCWCWCW≤300μs≤300μs≤300μs
Typical Current25A40A60A100A180A260A

2. Laser Diode Horizontal Stacks

STO-HSCW Series, CW Laser Diode Horizontal Stacks

ModelSTO-HSCW-20-3STO-HSCW-20-4STO-HSCW-40-3STO-HSCW-40-4
Output Power60W80W120W160W
Typical Current25A25A38A38A
Operation Voltage<6V<8V<6V<8V

Note: STO-HSCW-20/40-N can be customized with N≤20. The total output power is 20/40 times N.

STOU-HSQCW Series QCW Laser Diode Horizontal Stacks

ModelSTO-HSQCW-100~300-N
Output PowerQCW 100W~300W*N
Repetition Rate0-1000Hz
Pulse Width50-300μs
Duty Circle≤10% or ≤20%

Note: STO-HSQCW-100~300-N can be customized. Single unit can be mounted with 1, 2 or 3 pcs of laser diode bar. Typical wavelength of the diode bar is 805+/-3nm. However, the wavelength must be specified according to the special pulse width, repetition rate and heat sink designs.

Specifications of Diode Bar STO-HSCW-40-4

  • Output power (W): 80W

  • Center Wavelength at 25 °C (nm): 808±3

  • Power per bar (W): 40

  • Number of bars in one stack(N): 4

  • Working mode: CW

  • Operation Current (A): ≤22

  • Operating Voltage (V): ≤8

  • Cooling: water

  • Bar arrangement: linear 4bars

  • Operation Temperature(°C): 25±1

  • Applications: to be used in the diode pump laser module CEO-75E

Specifications of Diode Bar STO-HSCW-20-4:

  • Output power (W): 80W

  • Center Wavelength at 25 °C (nm): 808±3

  • Power per bar (W): 20

  • Number of bars in one stack(N): 4

  • Working mode: CW

  • Operation Current (A): £18

  • Operating Voltage (V): £8

  • Cooling: water

  • Bar arrangement: linear 4bars

  • Operation Temperature(°C): 25±1

  • Applications: to be used in the diode pump laser module CEO-75H

3. STO-VS Series CW/QCW Laser Diode Vertical Stacks


STO-VSQCW-MI/MA-100~300-NSTO-VSCW-MI/MA-40~100-N
Single Bar Power100W,150W,200W,300W QCW40W,60W,100W CW
Bar Total / StackN=1~20N=1~20
Bar Pitch0.5mm~2mm1.8mm
Wavelength808nm808nm

Note: STO-VSQCW/CW-MI/MA-100~300-N can be customized. We provide micro channel water cooling technology and high reliability macro channel water cooling technology. Typical wavelength of the diode bar is 808+/-3nm. However, the wavelength must be specified according to the special pulse width, repetition rate and heat sink designs.

4. Reliable QCW Diode Laser Stacks in Arc Heatsink

We make the QCW laser into an arc, which is beneficial to the lightweight design of the pump structure. Au-Sn packaging technology makes the laser have high reliability even in harsh working environment.diode stack

Feature

  • Wavelength: 808nm or up on requirement

  • Output power: 500 - 4800W

  • Operation mode: QCW

  • Cooling: actively cooled / passively cooled

Benefits

  • Efficient:High output power up into the 4800W.

  • Compact:Arc and lightweight design are easily integrated into pump module.

  • Robust:Shock and vibration resistant.

  • Reliable and high-quality: Gold and Tin (hard solder) mounting. Works even under the most demanding climatic conditions.

  • Wavelength combination: beneficial for full temperature pumping design.

Application

  • High energy research: QCW pumping sources for solid-state lasers.

  • Medical technology: Long-pulse operation, use in esthetics (epilation) and dermatology.

  • Excitation light source for solid-state lasers in the 1320 nm range for parenchyma surgery.

  • Defense: Short-pulse operation, use as a pumping source, for lighting or in LIDAR systems.

  • Industry: pump source for solid-state and fiber lasers.

ModelSTO-ARCQCW-MA-100~500-N
Optical parameters
Output power (W)QCW 100~500*N
Center wavelength at 25 °C (nm)808
Number of bars in one stack1~20
Bar pitch (mm)0.8~3
Center wavelength variation at 25 °C (nm)±3/±10
Typical spectral bandwidth (FWHM)<3
Divergence (degree) (FWHM)<39⊥<10‖
PolarizationTE
Wavelength shift (nm/℃)~0.28
Electrical parameters
Working modeQCW
Maximum duty cycle (%)£2%
Pulse length (us)50~1000
Frequency (Hz)1~1000
Operation current (A)<=100~500
Operating voltage (V)<=2*N
Typical slope (W/A)>1.1
Electro-optic conversion efficiency (%)>50
Thermal parameters
Operation temperature (℃)-40~60
Storage temperature (℃)-50~85
Storage humidity (%)<70
CoolingTEC/air cooling

Note:

  • STO-ARCQCW-MA-100~500-N represent N*100-500W laser stack which is mounted on an arc heatsink. The laser power of single bar is 100W, 200W, 300W or 500W.

  • The wavelengths of each bar in a single device can be arranged and combined according to the heat dissipation conditions.

  • The above parameters are measured at the heat sink temperature of 25oC.

  • Heat sink structure can be customized according to customer's special requirements

5. Reliable QCW Diode Laser Stacks in Annular Heatsink

The QCW laser is made into a ring, which improves the uniformity of the pump while making use of the lightweight design of the pump structure. Au-Sn packaging technology makes the laser have high reliability even in harsh working environment.diode stack

Feature

  • Wavelength: 808nm or up on request

  • Output power: 500W up to 10kW

  • Operation mode: QCW

  • Cooling: actively cooled / passively cooled

Benefits

  • Efficient: High output power up to 4800W.

  • Compact: Arc and lightweight design is easily integrated into pump module.

  • Robust: Shock and vibration resistant.

  • Reliable and high-quality: Gold and Tin (hard solder) mounting. Works even under the most demanding climatic conditions.

  • Wavelength combination: beneficial for full temperature pumping design.

Application

  • High energy research: QCW pumping sources for solid-state lasers.

  • Medical technology: Long-pulse operation, use in esthetics (epilation) and dermatology.

  • Pump source for solid-state lasers in the 1320nm range for parenchyma surgery.

  • Defense: Short-pulse operation, use as a pumping source, for lighting or in LIDAR systems.

  • Industry: Pump source for solid-state and fiber lasers.

ModelSTO-ARCQCW-MA-100~500-N
Optical parameters
Output power(W)QCW 100~500*N
Center wavelength at 25 °C(nm)808
Number of bars in one stack1~40
Bar pitch(mm)0.8~3
Center wavelength variation at 25 °C(nm)±3/±10
Typical spectral bandwidth (FWHM)<3
Divergence(degree)(FWHM)<39⊥<10‖
PolarizationTE
Wavelength shift(nm/℃)~0.28
Electrical parameters
Working modeQCW
Maximum duty cycle(%)£2%
Pulse length(us)50~1000
Frequency(Hz)1~1000
Operation current(A)<=100~500
Operating voltage(V)<=2*N
Typical slope(W/A)>1.1
Electro-optic conversion efficiency(%)>50
Thermal parameters
Operation temperature(℃)-40~60
Storage temperature(℃)-50~85
Storage humidity(%)<70
Coolingpassively cooled/actively cooled
Flow rate per bar(L/min)0.3-0.8

Note:

  • STO-ARCQCW-MA-100~500-N represents N*100-500W laser stack which is mounted on an annular heatsink. The laser power of single bar is 100W, 200W, 300W or 500W.

  • The wavelengths of each bar in a single device can be arranged and combined according to the heat dissipation conditions.

  • The above parameters are measured at the heat sink temperature of 25oC.

  • Heat sink structure can be customized according to customer's special requirements

  • The duty cycle is usually less than 2%. In case of special high duty cycle requirements, the laser structure can be customized. Then duty circle up to 20%.

6. Vertical QCW Diode Laser Stacks

We use Gold and Tin to assemble our vertical QCW stacks. This technology makes the laser have high reliability even in harsh working environment.diode stack

Feature

  • Wavelength: 808nm or up on request

  • Output power: 500W up to 10kW

  • Operation mode: QCW

  • Cooling: actively cooled / passively cooled

  • FAC available

Benefits

  • Customized upon request to adjust pumping structure.

  • Robust: Shock and vibration resistant.

  • Reliable and high-quality: Gold and Tin (hard solder) mounting. Works even under the most demanding climatic conditions.

  • Wavelength combination: beneficial for full temperature pumping design.

  • Duty circle up to 20%.

Application

  • High energy research: QCW pumping sources for solid-state lasers.

  • Medical technology: Long-pulse operation, use in esthetics (epilation) and dermatology.

  • Pump source for solid-state lasers in the 1320 nm range for parenchyma surgery.

  • Defense: Short-pulse operation, used as a pumping source, for lighting or in LIDAR systems.

  • Industry: Pump source for solid-state and fiber lasers.

ModelSTO-VSQCW-MI-MA-100~500-NSTO-VSQCW-MI-MA-100~500-N-FAC
Optical parameters
Output power(W)QCW 100~500*N
Output power after collimation(W)
90~450*N
Center wavelength at 25 °C(nm)808808
Number of bars in one stack1~201~20
Bar pitch(mm)0.8~30.8~3
Center wavelength variation at 25 °C(nm)±3/±10±3/±10
Typical spectral bandwidth (FWHM)<3<3
Typical fast axis divergence 95 %(°)66
Typical slow axis divergence 95 %(°)1010
Fast axis divergence (full power)(°)
<0.5
PolarizationTETE
Wavelength shift(nm/℃)~0.28~0.28
Electrical parameters
Working modeQCWQCW
Maximum duty cycle(%)£20%£20%
Pulse length(us)50~100050~1000
Frequency(Hz)1~10001~1000
Operation current(A)<=100~500<=100~500
Operating voltage(V)<=2*N<=2*N
Typical slope(W/A)>1.1>1.1
Electro-optic conversion efficiency(%)>50>50
Thermal parameters
Operation temperature(℃)-40~60-40~60
Storage temperature(℃)-50~85-50~85
Storage humidity(%)<70<70
Coolingpassively cooled/actively cooledpassively cooled/actively cooled
Flow rate per bar(L/min)0.3-0.80.3-0.8

Note:

  • STO-VSQCW-MI/MA-100~500-N. MI means micro channel cooler as a heatsink which needs deionized water. MA means passively cooled or pure water cooled heatsink.

  • STO-VSQCW-MI/MA-100~500-N. 100~500 represents that the laser power per bar can be 100W, 200W, 300W or 500W.

  • The above parameters are measured at the heat sink temperature of 25oC.

  • The wavelengths of each bar in a single device can be arranged and combined according to the heat dissipation conditions.

  • Heat sink structure can be customized according to customer's special requirements

7. Vertical CW Diode Laser Stacksdiode stack

Our vertical stacks can be used to increase the optical output power of your diode lasers To do so, we stack up to 12 mounted laser bars to form a diode laser stack or an assembly. Each of these laser bars individually supplies up to 100W in CW mode. Because of the small gaps between the laser bars, you obtain maximum brightness from the stacks, enabling you to work highly effectively. You can choose between laser diode stacks with a fast-axis (FA) or without collimation.

Feature

  • High optical output power of 100W CW per bar

  • Wavelength: 808 nm ±3nm

  • High efficiency, low divergence

  • Lifetime >10,000 hours, high reliability

  • Collimation: fast axis / without

Application

  • Material processing

  • Medical technology

  • Pumping source for fiber lasers and solid-state lasers.

ModelSTO-VSCW-MI-40~100-NSTO-VSCW-MI-40~100-N-FAC
Optical parameters
Output power(W)CW 40~100*N
Output power after collimation(W)
36~90*N
Center wavelength at 25 °C(nm)808808
Number of bars in one stack1~121~12
Bar pitch(mm)1.8/0.8~31.8/0.8~3
Center wavelength variation at 25 °C (nm)±3/±10±3/±10
Typical spectral bandwidth (FWHM)<3<3
Typical fast axis divergence 95 %(°)66
Typical slow axis divergence 95 %(°)1010
Fast axis divergence (full power)(°)
<0.5
PolarizationTETE
Wavelength shift(nm/℃)~0.28~0.28
Electrical parameters
Operation current(A)<=40~100<=40~100
Operating voltage(V)<=2*N<=2*N
Typical slope(W/A)>1.1>1.1
Electro-optic conversion efficiency(%)>50>50
Thermal parameters
Operation temperature(℃)20~3020~30
Storage temperature(℃)0~550~55
Storage humidity(%)<70<70
Coolingdeionized waterdeionized water
Flow rate per bar(L/min)0.3-0.80.3-0.8

Note:

  • STO-VSCW-MI-40~100-N. MI represents we use micro channel cooler as a heatsink which needs deionized water.

  • STO-VSCW-MI-40~100-N. 40~100 represents the laser power per bar can be 40W, 60W or 100W. 100W bar only can be used in cosmetic applications.

8. Laser Diode Stacks for Hair Removal

We supply various diode stacks for laser hair removal. These stacks can custom-designed and –made according to your specific requirements.

laser hair removal

Model No.STO-VS-Ml-100-N
ApplicationLaser hair removal handpiece
Operation modeCW
Bar numbers in one stackN=1-20 bars
Power per sub-mounts100W
Central wavelength at 25℃810nm/755nm/1064nm
Typical Operation current90A
Maximum Operation current100A
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